Field electron emission from bunchy flake-like nano-carbon films

doi:10.1088/1674-1056/18/5/059

Abstract

Abstract This paper reports that bunchy flake-like nano-graphite crystallite films (BNGCFs) were deposited on Si substrates by using the microwave chemical vapour deposition technique. Furthermore the BNGCFs were characterized by x-ray diffraction spectra, scanning electron microscopy, Raman spectra and field emission (FE) $I$--$V$ measurements, and a lowest turn-on field of 1.5 V/$\mu $m, and a high average emission current density of 30 mA/cm$^{2}$ at a macroscopic electric field of 8.0 V/$\mu $m were obtained. The $J$--$E$ data did not follow the original Fowler--Nordheim (F--N) relation since they were not well represented in the F--N plot by a straight line. A model considering the F--N mechanism, and the statistic effects of FE tip structures has been applied successfully to explain all the FE data observed for $E<8.8$ V/$\mu $m.

Keywords: bunchy flake-like nano-graphite crystallites films chemical vapour deposition electron field emission

Received: 11 September 2008
Revised: 23 November 2008
Accepted manuscript online:

PACS:	79.70.+q	(Field emission, ionization, evaporation, and desorption)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	68.55.-a	(Thin film structure and morphology)
	78.30.Na	(Fullerenes and related materials)
	78.66.Tr	(Fullerenes and related materials)
	78.67.-n	(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)

Fund: Project supported by the Shanghai Education Committee of China (Grant No 07ZZ95).

Cite this article:

Wang Xiao-Ping(王小平), Wang Li-Jun(王丽军), Duan Xin-Chao(段新超), Wang Long-Yang(王隆洋), Zhang Lei(张雷), Lv Cheng-Rui (吕承瑞), and Lei Tong(雷通) Field electron emission from bunchy flake-like nano-carbon films 2009 Chin. Phys. B 18 2078

[1]	Multiple enlarged growth of single crystal diamond by MPCVD with PCD-rimless top surface Ze-Yang Ren(任泽阳), Jun Liu(刘俊), Kai Su(苏凯), Jin-Feng Zhang(张金风), Jin-Cheng Zhang(张进成), Sheng-Rui Xu(许晟瑞), Yue Hao(郝跃). Chin. Phys. B, 2019, 28(12): 128103.
[2]	The properties of GaMnN lms grown by metalorganic chemical vapour deposition using Raman spectroscopy Xing Hai-Ying(邢海英), Niu Ping-Juan(牛萍娟), and Xie Yu-Xin(谢玉芯) . Chin. Phys. B, 2012, 21(7): 077801.
[3]	Zn/O ratio and oxygen chemical state of nanocrystalline ZnO films grown at different temperatures Fan Hai-Bo(范海波), Zheng Xin-Liang(郑新亮), Wu Si-Cheng(吴思诚), Liu Zhi-Gang(刘志刚), and Yao He-Bao(姚合宝) . Chin. Phys. B, 2012, 21(3): 038101.
[4]	Influence of double AlN buffer layers on the qualities of GaN films prepared by metal–organic chemical vapour deposition Lin Zhi-Yu (林志宇), Zhang Jin-Cheng (张进成), Zhou Hao (周昊), Li Xiao-Gang (李小刚), Meng Fan-Na (孟凡娜), Zhang Lin-Xia (张琳霞), Ai Shan (艾姗), Xu Sheng-Rui (许晟瑞), Zhao Yi (赵一), Hao Yue (郝跃). Chin. Phys. B, 2012, 21(12): 126804.
[5]	Field emissions of graphene films deposited on different substrates by CVD system Wang Xiao-Ping (王小平), Liu Xiao-Fei (刘晓菲), Liu Xin-Xin (刘欣欣), Wang Li-Jun (王丽军), Yang Can (杨灿), Jing Long-Wei (井龙伟), Li Song-Kun (李松坤), Pan Xiu-Fang (潘秀芳). Chin. Phys. B, 2012, 21(12): 128102.
[6]	Influence of ignition condition on the growth of silicon thin films using plasma enhanced chemical vapour deposition Zhang Hai-Long(张海龙), Liu Feng-Zhen(刘丰珍), Zhu Mei-Fang(朱美芳), and Liu Jin-Long(刘金龙) . Chin. Phys. B, 2012, 21(1): 015203.
[7]	Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition Li Hai-Ou(李海鸥), Huang Wei(黄伟), Tang Chak Wah(邓泽华), Deng Xiao-Fang(邓小芳), and Lau Kei May(刘纪美). Chin. Phys. B, 2011, 20(6): 068502.
[8]	Optical and structural investigation of a-plane GaN layers on r-plane sapphire with nucleation layer optimization Zhang Jin-Feng (张金风), Xu Sheng-Rui (许晟瑞), Zhang Jin-Cheng (张进成), Hao Yue (郝跃). Chin. Phys. B, 2011, 20(5): 057801.
[9]	The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition Le Ling-Cong(乐伶聪), Zhao De-Gang(赵德刚), Wu Liang-Liang(吴亮亮), Deng Yi(邓懿), Jiang De-Sheng(江德生), Zhu Jian-Jun(朱建军), Liu Zong-Shun(刘宗顺), Wang Hui(王辉), Zhang Shu-Ming(张书明), Zhang Bao-Shun(张宝顺), and Yang Hui(杨辉) . Chin. Phys. B, 2011, 20(12): 127306.
[10]	Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate Xu Sheng-Rui(许晟瑞), Hao Yue(郝跃), Zhang Jin-Cheng(张进成), Xue Xiao-Yong(薛晓咏), Li Pei-Xian(李培咸), Li Jian-Ting(李建婷), Lin Zhi-Yu(林志宇), Liu Zi-Yang(刘子扬), Ma Jun-Cai(马俊彩), He Qiang(贺强), and Lü Ling(吕玲) . Chin. Phys. B, 2011, 20(10): 107802.
[11]	Synthesis of ZnO films with a special texture and enhanced field emission properties Wang Xiao-Ping(王小平), Wang Zi(王子), Wang Li-Jun(王丽军), and Mei Cui-Yu(梅翠玉) . Chin. Phys. B, 2011, 20(10): 105203.
[12]	Effects of V/III ratio on the growth of a-plane GaN films Xie Zi-Li(谢自力), Li Yi(李弋), Liu Bin(刘斌), Zhang Rong(张荣), Xiu Xiang-Qian(修向前), Chen Peng(陈鹏), and Zheng You-Liao(郑有炓) . Chin. Phys. B, 2011, 20(10): 106801.
[13]	Electroluminescence of double-doped diamond thin films Zhang Shi(章诗), Wang Xiao-Ping(王小平), Wang Li-Jun(王丽军), Zhu Yu-Zhuan(朱玉传), Mei Cui-Yu(梅翠玉), Liu Xin-Xin(刘欣欣), Li Huai-Hui(李怀辉), and Gu Ying-Zhan(顾应展). Chin. Phys. B, 2010, 19(9): 097805.
[14]	Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer Wu Yu-Xin(吴玉新), Zhu Jian-Jun(朱建军), Chen Gui-Feng(陈贵锋), Zhang Shu-Ming(张书明), Jiang De-Sheng(江德生), Liu Zong-Shun(刘宗顺), Zhao De-Gang(赵德刚), Wang Hui(王辉), Wang Yu-Tian(王玉田), and Yang Hui(杨辉). Chin. Phys. B, 2010, 19(3): 036801.
[15]	SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes Wang Yue-Hu(王悦湖), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Zhang Lin(张林), Jia Ren-Xu(贾仁需), and Chen Da(陈达). Chin. Phys. B, 2010, 19(3): 036803.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Field electron emission from bunchy flake-like nano-carbon films

Cite this article:

Online attention