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Chin. Phys. B, 2010, Vol. 19(3): 036803    DOI: 10.1088/1674-1056/19/3/036803

SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes

Wang Yue-Hu(王悦湖), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Zhang Lin(张林), Jia Ren-Xu(贾仁需), and Chen Da(陈达)
School of Microelectronics, Xidian University Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
Abstract  This paper presents the results of unintentionally doped 4H-SiC epilayers grown on n-type Si-faced 4H-SiC substrates with 8° off-axis toward the [11$\overline 2$ 0] direction by low pressure horizontal hot-wall chemical vapour deposition. Growth temperature and pressure are 1580 °C and 10Pa, respectively. Good surface morphology of the sample is observed using atomic force microscopy (AFM) and scanning electron microscopy (SEM). Fourier transform infrared spectroscopy (FTIR) and x-ray diffraction (XRD) are used to characterize epitaxial layer thickness and the structural quality of the films respectively. The carrier concentration in the unintentional 4H-SiC homoepitaxial layer is about 6.4×1014 cm-3 obtained by c--V measurements. Schottky barrier diodes (SBDs) are fabricated on the epitaxial wafer in order to verify the quality of the wafer and to obtain information about the correlation between background impurity and electrical properties of the devices. Ni and Ti/4H-SiC Schottky barrier diodes with very good performances were obtained and their ideality factors are 1.10 and 1.05 respectively.
Keywords:  4H-silicon carbide      low pressure horizontal hot-wall chemical vapour deposition      atomic force microscope      scanning electron microscopy  
Received:  17 April 2009      Revised:  08 July 2009      Accepted manuscript online: 
PACS:  68.55.A- (Nucleation and growth)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  85.30.Kk (Junction diodes)  
  68.37.Ps (Atomic force microscopy (AFM))  
  78.30.Hv (Other nonmetallic inorganics)  
  73.61.Le (Other inorganic semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No.~60876061), 13115 Innovation Engineering Program (Grant No.~2008ZDKG-30) and the Advanced Research Program (Grant No.~51308040302).

Cite this article: 

Wang Yue-Hu(王悦湖), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Zhang Lin(张林), Jia Ren-Xu(贾仁需), and Chen Da(陈达) SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes 2010 Chin. Phys. B 19 036803

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