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Chin. Phys. B, 2010, Vol. 19(9): 097805    DOI: 10.1088/1674-1056/19/9/097805
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Electroluminescence of double-doped diamond thin films

Zhang Shi(章诗), Wang Xiao-Ping(王小平), Wang Li-Jun(王丽军), Zhu Yu-Zhuan(朱玉传), Mei Cui-Yu(梅翠玉), Liu Xin-Xin(刘欣欣), Li Huai-Hui(李怀辉), and Gu Ying-Zhan(顾应展)
College of Science, University of Shanghai for Science and Technology, Shanghai 200093, China
Abstract  A new electroluminescence device is fabricated by microwave plasma chemical vapour deposition system and electron beam vapour deposition system. It is comprised of highly doped silicon/diamond/boron/nitrogen-doped diamond/indium tin oxide thin films. Effects of process parameters on morphologies and structures of the thin films are detected and analysed by scanning electron microscopy, Raman spectrometer and x-ray photoelectron spectrometer. A direct-current (DC) power supply is used to drive the electroluminescence device. The blue light emission with a luminance of 1.2 cd·m- 2 is observed from this double-doped diamond thin film electroluminescence device at an applied voltage of 105 V.
Keywords:  electroluminescence      double-doped diamond thin film      microwave plasma chemical vapour deposition      electron beam vapour deposition  
Received:  14 January 2010      Revised:  09 February 2010      Accepted manuscript online: 
PACS:  7860F  
  6855  
  8115H  
  8115G  
Fund: Project supported by the Shanghai Education Committee of China (Grant No. 07ZZ95) and the Shanghai Human Resources and Social Security Bureau (Grant No. 2009023).

Cite this article: 

Zhang Shi(章诗), Wang Xiao-Ping(王小平), Wang Li-Jun(王丽军), Zhu Yu-Zhuan(朱玉传), Mei Cui-Yu(梅翠玉), Liu Xin-Xin(刘欣欣), Li Huai-Hui(李怀辉), and Gu Ying-Zhan(顾应展) Electroluminescence of double-doped diamond thin films 2010 Chin. Phys. B 19 097805

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