The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

doi:10.1088/1674-1056/20/12/127306

Abstract In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density.

Keywords: X-ray diffraction metalorganic chemical vapour deposition nitrides

Received: 03 May 2011
Revised: 27 June 2011
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	61.05.cp	(X-ray diffraction)

Fund: Project supported by the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos. 10990100, 60836003, and 60776047), the National Basic Research Program of China (Grant No. 2007CB936700), and the National High Technology Research and Development Program of China (Grant No. 2007AA03Z401).

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Le Ling-Cong(乐伶聪), Zhao De-Gang(赵德刚), Wu Liang-Liang(吴亮亮), Deng Yi(邓懿), Jiang De-Sheng(江德生), Zhu Jian-Jun(朱建军), Liu Zong-Shun(刘宗顺), Wang Hui(王辉), Zhang Shu-Ming(张书明), Zhang Bao-Shun(张宝顺), and Yang Hui(杨辉) The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition 2011 Chin. Phys. B 20 127306

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The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

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