Please wait a minute...
Chin. Phys., 2005, Vol. 14(6): 1255-1258    DOI: 10.1088/1009-1963/14/6/035
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

SiCGe/SiC heterojunction and its MEDICI simulation of optoelectronic characteristics

Lü Zheng, Chen Zhi-Ming, Pu Hong-Bin
Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048
Abstract  Optoelectronic characteristics of the SiC1-xGex /SiC heterojunction photodiode are simulated using MEDICI after the theoretical investigation of key properties for SiC1-xGex. The calculations show that SiC1-xGex /SiC with x=0.3 may have a small lattice mismatch with 3C-SiC and a good response to the visible light and near infrared light. The response spectrum of the SiC1-xGex /SiC heterojunction photodiodes, which consists of a p-type SiC1-xGex absorption layer with a doping concentration of 1′1015cm-3, a thickness of 1.6μm and x=0.3, has a peak value of 250mA/W at 0.52μm and the peak value can even reach 102 mA/W at 0.7μm.
Keywords:  heterojunction      absorption coefficient.      SiCGe/SiC  
Received:  29 October 2004      Revised:  04 February 2005      Published:  27 May 2005
PACS:  85.60.Dw (Photodiodes; phototransistors; photoresistors)  
  85.60.Bt (Optoelectronic device characterization, design, and modeling)  
Fund: Project supported by the National Natural Science Foundation of China (grant No 60376011) and Specialized Research Fund for the Doctoral Program of High Education (grant No 20040700001)

Cite this article: 

Lü Zheng, Chen Zhi-Ming, Pu Hong-Bin SiCGe/SiC heterojunction and its MEDICI simulation of optoelectronic characteristics 2005 Chin. Phys. 14 1255

[1] CdS/Si nanofilm heterojunctions based on amorphous silicon films: Fabrication, structures, and electrical properties
Yong Li(李勇), Peng-Fei Ji(姬鹏飞), Yue-Li Song(宋月丽), Feng-Qun Zhou(周丰群), Hong-Chun Huang(黄宏春), and Shu-Qing Yuan(袁书卿). Chin. Phys. B, 2021, 30(2): 026101.
[2] Two-step processed efficient perovskite solar cells via improving perovskite/PTAA interface using solvent engineering in PbI2 precursor
Cao-Yu Long(龙操玉), Ning Wang(王宁), Ke-Qing Huang(黄可卿), Heng-Yue Li(李恒月), Biao Liu(刘标), Jun-Liang Yang(阳军亮). Chin. Phys. B, 2020, 29(4): 048801.
[3] Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide (a-SiOx:H) on <100>- and <111>-orientated c-Si wafers
Jun-Fan Chen(陈俊帆), Sheng-Sheng Zhao(赵生盛), Ling-Ling Yan(延玲玲), Hui-Zhi Ren(任慧志), Can Han(韩灿), De-Kun Zhang(张德坤), Chang-Chun Wei(魏长春), Guang-Cai Wang(王广才), Guo-Fu Hou(侯国付), Ying Zhao(赵颖), Xiao-Dan Zhang(张晓丹). Chin. Phys. B, 2020, 29(3): 038801.
[4] Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor
Xian-Cheng Liu(刘先程), Jia-Jun Ma(马佳俊), Hong-Yun Xie(谢红云), Pei Ma(马佩), Liang Chen(陈亮), Min Guo(郭敏), Wan-Rong Zhang(张万荣). Chin. Phys. B, 2020, 29(2): 028501.
[5] A 9% efficiency of flexible Mo-foil-based Cu2ZnSn(S, Se)4 solar cells by improving CdS buffer layer and heterojunction interface
Quan-Zhen Sun(孙全震), Hong-Jie Jia(贾宏杰), Shu-Ying Cheng(程树英), Hui Deng(邓辉)\ccclink, Qiong Yan(严琼), Bi-Wen Duan(段碧雯), Cai-Xia Zhang(张彩霞), Qiao Zheng(郑巧), Zhi-Yuan Yang(杨志远), Yan-Hong Luo(罗艳红), Qing-Bo Men(孟庆波), and Shu-Juan Huang(黄淑娟). Chin. Phys. B, 2020, 29(12): 128801.
[6] Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout
Rui Chen(陈蕊), Dong-Yue Jin(金冬月), Wan-Rong Zhang(张万荣), Li-Fan Wang(王利凡), Bin Guo(郭斌), Hu Chen(陈虎), Ling-Han Yin(殷凌寒), Xiao-Xue Jia(贾晓雪). Chin. Phys. B, 2019, 28(9): 098502.
[7] Rectifying characteristics and solar-blind photoresponse in β-Ga2O3/ZnO heterojunctions
Xiao-Fei Ma(马晓菲), Yuan-Qi Huang(黄元琪), Yu-Song Zhi(支钰崧), Xia Wang(王霞), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), Wei-Hua Tang(唐为华). Chin. Phys. B, 2019, 28(8): 088503.
[8] Exploring alkylthiol additives in PBDB-T:ITIC blended active layers for solar cell applications
Xiang Li(李想), Zhiqun He(何志群), Mengjie Sun(孙盟杰), Huimin Zhang(张慧敏), Zebang Guo(郭泽邦), Yajun Xu(许亚军), Han Li(李瀚), Chunjun Liang(梁春军), Xiping Jing(荆西平). Chin. Phys. B, 2019, 28(8): 088802.
[9] Annealing-enhanced interlayer coupling interaction inGaS/MoS2 heterojunctions
Xiuqing Meng(孟秀清), Shulin Chen(陈书林), Yunzhang Fang(方允樟), Jianlong Kou(寇建龙). Chin. Phys. B, 2019, 28(7): 078101.
[10] Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor
Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏), Hong-Xia Guo(郭红霞). Chin. Phys. B, 2019, 28(7): 076106.
[11] Simulation of a-Si: H/c-Si heterojunction solar cells: From planar junction to local junction
Haibin Huang(黄海宾), Lang Zhou(周浪), Jiren Yuan(袁吉仁), Zhijue Quan(全知觉). Chin. Phys. B, 2019, 28(12): 128503.
[12] Electro-optical dual modulation on resistive switching behavior in BaTiO3/BiFeO3/TiO2 heterojunction
Jia-Jia Zhao(赵佳佳), Jin-Shuai Zhang(张金帅), Feng Zhang(张锋), Wei Wang(王威), Hai-Rong He(何海蓉), Wang-Yang Cai(蔡汪洋), Jin Wang(王进). Chin. Phys. B, 2019, 28(12): 126801.
[13] Photodetectors based on two-dimensional materials and organic thin-film heterojunctions
Jiayue Han(韩嘉悦), Jun Wang(王军). Chin. Phys. B, 2019, 28(1): 017103.
[14] Pressure-mediated contact quality improvement between monolayer MoS2 and graphite
Mengzhou Liao(廖梦舟), Luojun Du(杜罗军), Tingting Zhang(张婷婷), Lin Gu(谷林), Yugui Yao(姚裕贵), Rong Yang(杨蓉), Dongxia Shi(时东霞), Guangyu Zhang(张广宇). Chin. Phys. B, 2019, 28(1): 017301.
[15] Intrinsic charge transport behaviors in graphene-black phosphorus van der Waals heterojunction devices
Guo-Cai Wang(王国才), Liang-Mei Wu(吴良妹), Jia-Hao Yan(严佳浩), Zhang Zhou(周璋), Rui-Song Ma(马瑞松), Hai-Fang Yang(杨海方), Jun-Jie Li(李俊杰), Chang-Zhi Gu(顾长志), Li-Hong Bao(鲍丽宏), Shi-Xuan Du(杜世萱), Hong-Jun Gao(高鸿钧). Chin. Phys. B, 2018, 27(7): 077303.
No Suggested Reading articles found!