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Other articles related with "trench"：
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118502 |
Jin-Ping Zhang(张金平), Wei Chen(陈伟), Zi-Xun Chen(陈子珣), and Bo Zhang(张波) |
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SiC trench MOSFET with dual shield gate and optimized JFET layer for improved dynamic performance and safe operating area capability |
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Chin. Phys. B
2023 Vol.32 (11): 118502-118502
[Abstract]
(105)
[HTML 0 KB]
[PDF 947 KB]
(49)
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58501 |
Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), and Fei Cao(曹菲) |
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Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar |
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Chin. Phys. B
2023 Vol.32 (5): 58501-058501
[Abstract]
(201)
[HTML 0 KB]
[PDF 2419 KB]
(84)
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58504 |
Kaizhe Jiang(蒋铠哲), Xiaodong Zhang(张孝冬), Chuan Tian(田川), Shengrong Zhang(张升荣),Liqiang Zheng(郑理强), Rongzhao He(赫荣钊), and Chong Shen(沈重) |
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A SiC asymmetric cell trench MOSFET with a split gate and integrated p+-poly Si/SiC heterojunction freewheeling diode |
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Chin. Phys. B
2023 Vol.32 (5): 58504-058504
[Abstract]
(186)
[HTML 1 KB]
[PDF 1406 KB]
(276)
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38501 |
Jin-Ping Zhang(张金平), Hao-Nan Deng(邓浩楠), Rong-Rong Zhu(朱镕镕), Ze-Hong Li(李泽宏), and Bo Zhang(张波) |
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High performance carrier stored trench bipolar transistor with dual shielding structure |
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Chin. Phys. B
2023 Vol.32 (3): 38501-038501
[Abstract]
(297)
[HTML 1 KB]
[PDF 734 KB]
(170)
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98502 |
Xinxin Zuo(左欣欣), Jiang Lu(陆江), Xiaoli Tian(田晓丽), Yun Bai(白云), Guodong Cheng(成国栋), Hong Chen(陈宏), Yidan Tang(汤益丹), Chengyue Yang(杨成樾), and Xinyu Liu(刘新宇) |
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Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure |
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Chin. Phys. B
2022 Vol.31 (9): 98502-098502
[Abstract]
(306)
[HTML 0 KB]
[PDF 1544 KB]
(154)
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97303 |
Chenkai Zhu(朱晨凯), Linna Zhao(赵琳娜), Zhuo Yang(杨卓), and Xiaofeng Gu(顾晓峰) |
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Degradation and breakdown behaviors of SGTs under repetitive unclamped inductive switching avalanche stress |
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Chin. Phys. B
2022 Vol.31 (9): 97303-097303
[Abstract]
(323)
[HTML 0 KB]
[PDF 3307 KB]
(85)
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78501 |
Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲) |
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A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance |
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Chin. Phys. B
2022 Vol.31 (7): 78501-078501
[Abstract]
(403)
[HTML 1 KB]
[PDF 1551 KB]
(140)
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28505 |
Xiao-Liang Chen(陈晓亮), Tian Chen(陈天), Wei-Feng Sun(孙伟锋), Zhong-Jian Qian(钱忠健), Yu-Dai Li(李玉岱), and Xing-Cheng Jin(金兴成) |
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Impact of STI indium implantation on reliability of gate oxide |
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Chin. Phys. B
2022 Vol.31 (2): 28505-028505
[Abstract]
(328)
[HTML 0 KB]
[PDF 1321 KB]
(94)
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58502 |
Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), Cheng-Hao Yu(于成浩), and Fei Cao(曹菲) |
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Improved 4H-SiC UMOSFET with super-junction shield region |
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Chin. Phys. B
2021 Vol.30 (5): 58502-058502
[Abstract]
(553)
[HTML 1 KB]
[PDF 1030 KB]
(179)
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124210 |
Huahui Zhang(张华辉), Weili Zhang(张伟利), Zhao Wang(王昭), Hongyang Zhu(朱洪杨), Chao Yu(余超), Jiayu Guo(郭佳宇), Shanshan Wang(王珊珊), and Yunjiang Rao(饶云江) |
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Decoherence of fiber light sources using a single-trench fiber |
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Chin. Phys. B
2020 Vol.29 (12): 124210-
[Abstract]
(235)
[HTML 1 KB]
[PDF 2097 KB]
(83)
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57701 |
Lijuan Wu(吴丽娟), Lin Zhu(朱琳), Xing Chen(陈星) |
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Variable-K double trenches SOI LDMOS with high-concentration P-pillar |
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Chin. Phys. B
2020 Vol.29 (5): 57701-057701
[Abstract]
(584)
[HTML 1 KB]
[PDF 484 KB]
(115)
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58503 |
Zhi-Gang Wang(汪志刚), Tao Liao(廖涛), Ya-Nan Wang(王亚南) |
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Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation |
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Chin. Phys. B
2019 Vol.28 (5): 58503-058503
[Abstract]
(668)
[HTML 1 KB]
[PDF 1019 KB]
(212)
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37201 |
Qi Li(李琦), Zhao-Yang Zhang(张昭阳), Hai-Ou Li(李海鸥), Tang-You Sun(孙堂友), Yong-He Chen(陈永和), Yuan Zuo(左园) |
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Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate |
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Chin. Phys. B
2019 Vol.28 (3): 37201-037201
[Abstract]
(645)
[HTML 1 KB]
[PDF 1984 KB]
(155)
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87102 |
Xue-Qian Zhong(仲雪倩), Jue Wang(王珏), Bao-Zhu Wang(王宝柱), Heng-Yu Wang(王珩宇), Qing Guo(郭清), Kuang Sheng(盛况) |
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Investigations on mesa width design for 4H-SiC trench super junction Schottky diodes |
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Chin. Phys. B
2018 Vol.27 (8): 87102-087102
[Abstract]
(843)
[HTML 0 KB]
[PDF 1573 KB]
(295)
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107101 |
Zhan-Wei Shen(申占伟), Feng Zhang(张峰), Sima Dimitrijev, Ji-Sheng Han(韩吉胜), Guo-Guo Yan(闫果果), Zheng-Xin Wen(温正欣), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Xing-Fang Liu(刘兴昉), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平) |
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Comparative study of electrical characteristics for n-type 4H-SiC planar and trench MOS capacitors annealed in ambient NO |
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Chin. Phys. B
2017 Vol.26 (10): 107101-107101
[Abstract]
(550)
[HTML 1 KB]
[PDF 1086 KB]
(363)
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127304 |
Yi-Tao He(何逸涛), Ming Qiao(乔明), Bo Zhang(张波) |
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Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer |
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Chin. Phys. B
2016 Vol.25 (12): 127304-127304
[Abstract]
(755)
[HTML 1 KB]
[PDF 431 KB]
(266)
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77201 |
Qi Li(李琦), Hai-Ou Li(李海鸥), Ping-Jiang Huang(黄平奖), Gong-Li Xiao(肖功利), Nian-Jiong Yang(杨年炯) |
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Improving breakdown voltage performance of SOI power device with folded drift region |
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Chin. Phys. B
2016 Vol.25 (7): 77201-077201
[Abstract]
(848)
[HTML 1 KB]
[PDF 898 KB]
(583)
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77201 |
Zhai Dong-Yuan (翟东媛), Zhu Jun (朱俊), Zhao Yi (赵毅), Cai Yin-Fei (蔡银飞), Shi Yi (施毅), Zheng You-Liao (郑有炓) |
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High performance trench MOS barrier Schottky diode with high-k gate oxide |
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Chin. Phys. B
2015 Vol.24 (7): 77201-077201
[Abstract]
(1054)
[HTML 1 KB]
[PDF 523 KB]
(1173)
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47304 |
Li Peng-Cheng (李鹏程), Luo Xiao-Rong (罗小蓉), Luo Yin-Chun (罗尹春), Zhou Kun (周坤), Shi Xian-Long (石先龙), Zhang Yan-Hui (张彦辉), Lv Meng-Shan (吕孟山) |
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An ultra-low specific on-resistance trench LDMOS with a U-shaped gate and accumulation layer |
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Chin. Phys. B
2015 Vol.24 (4): 47304-047304
[Abstract]
(754)
[HTML 0 KB]
[PDF 618 KB]
(653)
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90702 |
Peng Chao (彭超), Hu Zhi-Yuan (胡志远), Ning Bing-Xu (宁冰旭), Huang Hui-Xiang (黄辉祥), Fan Shuang (樊双), Zhang Zheng-Xuan (张正选), Bi Da-Wei (毕大炜), En Yun-Fei (恩云飞) |
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Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs |
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Chin. Phys. B
2014 Vol.23 (9): 90702-090702
[Abstract]
(534)
[HTML 1 KB]
[PDF 531 KB]
(1021)
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88504 |
Zhang Jin-Ping (张金平), Li Ze-Hong (李泽宏), Zhang Bo (张波), Li Zhao-Ji (李肇基) |
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A novel high performance TFS SJ IGBT with a buried oxide layer |
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Chin. Phys. B
2014 Vol.23 (8): 88504-088504
[Abstract]
(620)
[HTML 1 KB]
[PDF 461 KB]
(451)
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77201 |
Chen Si-Zhe (陈思哲), Sheng Kuang (盛况) |
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Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors |
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Chin. Phys. B
2014 Vol.23 (7): 77201-077201
[Abstract]
(613)
[HTML 1 KB]
[PDF 783 KB]
(489)
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118502 |
Fan Jie (范杰), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基) |
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High-voltage SOI lateral MOSFET with a dual vertical field plate |
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Chin. Phys. B
2013 Vol.22 (11): 118502-118502
[Abstract]
(698)
[HTML 1 KB]
[PDF 451 KB]
(736)
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77309 |
Fu Qiang (付强), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基) |
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A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate |
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Chin. Phys. B
2013 Vol.22 (7): 77309-077309
[Abstract]
(591)
[HTML 1 KB]
[PDF 585 KB]
(627)
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48501 |
Fan Jie (范杰), Wang Zhi-Gang (汪志刚), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉) |
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Dual-gate lateral double-diffused metal–oxide semiconductor with ultra-low specific on-resistance |
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Chin. Phys. B
2013 Vol.22 (4): 48501-048501
[Abstract]
(796)
[HTML 1 KB]
[PDF 592 KB]
(1398)
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27303 |
Luo Xiao-Rong (罗小蓉), Wang Qi (王琦), Yao Guo-Liang (姚国亮), Wang Yuan-Gang (王元刚), Lei Tian-Fei (雷天飞), Wang Pei (王沛), Jiang Yong-Heng (蒋永恒), Zhou Kun (周坤), Zhang Bo (张波) |
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A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pitch |
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Chin. Phys. B
2013 Vol.22 (2): 27303-027303
[Abstract]
(783)
[HTML 1 KB]
[PDF 809 KB]
(837)
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27305 |
Wang Pei (王沛), Luo Xiao-Rong (罗小蓉), Jiang Yong-Heng (蒋永恒), Wang Qi (王琦), Zhou Kun (周坤), Wu Li-Juan (吴丽娟), Wang Xiao-Wei (王骁玮), Cai Jin-Yong (蔡金勇), Luo Yin-Chun (罗尹春), Fan Ye (范叶), Hu Xia-Rong (胡夏融), Fan Yuan-Hang (范远航), Wei Jie (魏杰), Zhang Bo (张波) |
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Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench |
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Chin. Phys. B
2013 Vol.22 (2): 27305-027305
[Abstract]
(772)
[HTML 1 KB]
[PDF 535 KB]
(756)
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78502 |
Hu Xia-Rong(胡夏融), Zhang Bo(张波), Luo Xiao-Rong(罗小蓉), Wang Yuan-Gang(王元刚), Lei Tian-Fei(雷天飞), and Li Zhao-Ji(李肇基) |
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A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS |
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Chin. Phys. B
2012 Vol.21 (7): 78502-078502
[Abstract]
(1465)
[HTML 1 KB]
[PDF 152 KB]
(1039)
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68504 |
Zhang Jin-Ping(张金平), Li Ze-Hong(李泽宏), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
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A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer |
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Chin. Phys. B
2012 Vol.21 (6): 68504-068504
[Abstract]
(1373)
[HTML 1 KB]
[PDF 801 KB]
(1099)
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68501 |
Luo Xiao-Rong(罗小蓉), Yao Guo-Liang(姚国亮), Zhang Zheng-Yuan(张正元), Jiang Yong-Heng(蒋永恒), Zhou Kun(周坤), Wang Pei(王沛), Wang Yuan-Gang(王元刚), Lei Tian-Fei(雷天飞), Zhang Yun-Xuan(张云轩), and Wei Jie(魏杰) |
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A low on-resistance triple RESURF SOI LDMOS with planar and trench gate integration |
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Chin. Phys. B
2012 Vol.21 (6): 68501-068501
[Abstract]
(1694)
[HTML 1 KB]
[PDF 297 KB]
(1694)
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70701 |
Liu Zhang-Li(刘张李), Hu Zhi-Yuan(胡志远), Zhang Zheng-Xuan(张正选), Shao Hua(邵华), Chen Ming(陈明), Bi Da-Wei(毕大炜), Ning Bing-Xu(宁冰旭), and Zou Shi-Chang(邹世昌) |
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Bias dependence of a deep submicron NMOSFET response to total dose irradiation |
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Chin. Phys. B
2011 Vol.20 (7): 70701-070701
[Abstract]
(1350)
[HTML 1 KB]
[PDF 1358 KB]
(969)
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28501 |
Luo Xiao-Rong(罗小蓉), Yao Guo-Liang(姚国亮), Chen Xi(陈曦), Wang Qi(王琦), Ge Rui(葛瑞), and Florin Udrea |
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Ultra-low on-resistance high voltage (>600 V) SOI MOSFET with a reduced cell pitch |
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Chin. Phys. B
2011 Vol.20 (2): 28501-028501
[Abstract]
(1440)
[HTML 1 KB]
[PDF 1846 KB]
(2311)
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120703 |
Liu Zhang-Li(刘张李), Hu Zhi-Yuan(胡志远), Zhang Zheng-Xuan(张正选), Shao Hua(邵华), Chen Ming(陈明), Bi Da-Wei(毕大炜), Ning Bing-Xu(宁冰旭), and Zou Shi-Chang(邹世昌) |
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Total ionizing dose effect in an input/output device for flash memory |
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Chin. Phys. B
2011 Vol.20 (12): 120703-120703
[Abstract]
(1576)
[HTML 1 KB]
[PDF 303 KB]
(745)
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120702 |
Hu Zhi-Yuan(胡志远), Liu Zhang-Li(刘张李), Shao-Hua(邵华), Zhang Zheng-Xuan(张正选), Ning Bing-Xu(宁冰旭), Chen Ming(陈明), Bi Da-Wei(毕大炜), and Zou Shi-Chang(邹世昌) |
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Impact of substrate bias on radiation-induced edge effects in MOSFETs |
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Chin. Phys. B
2011 Vol.20 (12): 120702-120702
[Abstract]
(1384)
[HTML 1 KB]
[PDF 584 KB]
(1036)
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1231 |
Wang Cai-Lin(王彩琳) and Sun Jun(孙军) |
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An oxide filled extended trench gate super junction MOSFET structure |
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Chin. Phys. B
2009 Vol.18 (3): 1231-1236
[Abstract]
(1308)
[HTML 1 KB]
[PDF 788 KB]
(2069)
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3104 |
Li Rui(李睿), Yu Liu-Jiang(俞柳江), Dong Ye-Min(董业民), and Wang Ching-Dong(王庆东) |
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Effect of STI-induced mechanical stress on leakage current in deep submicron CMOS devices |
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Chin. Phys. B
2007 Vol.16 (10): 3104-3107
[Abstract]
(1667)
[HTML 0 KB]
[PDF 514 KB]
(1908)
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