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Other articles related with "interface state"：
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34303 |
Shao-Yong Huo(霍绍勇), Long-Chao Yao(姚龙超), Kuan-Hong Hsieh(谢冠宏), Chun-Ming Fu(符纯明), Shih-Chia Chiu(邱士嘉), Xiao-Chao Gong(龚小超), and Jian Deng(邓健) |
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Tunable topological interface states and resonance states of surface waves based on the shape memory alloy |
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Chin. Phys. B
2023 Vol.32 (3): 34303-034303
[Abstract]
(226)
[HTML 1 KB]
[PDF 2214 KB]
(76)
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87804 |
Zeng-Ping Su(苏增平), Tong-Tong Wei(魏彤彤), and Yue-Ke Wang(王跃科) |
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Dual-channel tunable near-infrared absorption enhancement with graphene induced by coupled modes of topological interface states |
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Chin. Phys. B
2022 Vol.31 (8): 87804-087804
[Abstract]
(339)
[HTML 0 KB]
[PDF 3155 KB]
(59)
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88501 |
Jianfei Chen(陈健菲), Chaohua Wu(吴超华), Jingtao Fan(樊景涛), and Gang Chen(陈刚) |
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Characterization of topological phase of superlattices in superconducting circuits |
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Chin. Phys. B
2022 Vol.31 (8): 88501-088501
[Abstract]
(335)
[HTML 0 KB]
[PDF 1129 KB]
(59)
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57303 |
Ling-Mei Zhang(张令梅), Yuan-Yuan Miao(苗圆圆), Zhi-Peng Cao(曹智鹏), Shuai Qiu(邱帅), Guang-Ping Zhang(张广平), Jun-Feng Ren(任俊峰), Chuan-Kui Wang(王传奎), and Gui-Chao Hu(胡贵超) |
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Bias-induced reconstruction of hybrid interface states in magnetic molecular junctions |
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Chin. Phys. B
2022 Vol.31 (5): 57303-057303
[Abstract]
(315)
[HTML 1 KB]
[PDF 1700 KB]
(86)
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48504 |
Xi-Ming Chen(陈喜明), Bang-Bing Shi(石帮兵), Xuan Li(李轩), Huai-Yun Fan(范怀云), Chen-Zhan Li(李诚瞻), Xiao-Chuan Deng(邓小川), Hai-Hui Luo(罗海辉), Yu-Dong Wu(吴煜东), and Bo Zhang(张波) |
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Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs |
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Chin. Phys. B
2021 Vol.30 (4): 48504-
[Abstract]
(469)
[HTML 1 KB]
[PDF 790 KB]
(157)
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67203 |
Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Tao-Tao Que(阙陶陶), Qiu-Ling Qiu(丘秋凌), Liang He(何亮), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Qian-Shu Wu(吴千树), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬) |
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Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiNx gate dielectric |
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Chin. Phys. B
2020 Vol.29 (6): 67203-067203
[Abstract]
(670)
[HTML 1 KB]
[PDF 770 KB]
(159)
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47304 |
Qing Zhu(朱青), Xiao-Hua Ma(马晓华), Yi-Lin Chen(陈怡霖), Bin Hou(侯斌), Jie-Jie Zhu(祝杰杰), Meng Zhang(张濛), Mei Wu(武玫), Ling Yang(杨凌), Yue Hao(郝跃) |
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Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs |
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Chin. Phys. B
2020 Vol.29 (4): 47304-047304
[Abstract]
(627)
[HTML 1 KB]
[PDF 753 KB]
(180)
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97203 |
Yi-Dong Wang(王一栋), Jun Chen(陈俊) |
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Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode |
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Chin. Phys. B
2018 Vol.27 (9): 97203-097203
[Abstract]
(608)
[HTML 1 KB]
[PDF 1187 KB]
(186)
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107101 |
Zhan-Wei Shen(申占伟), Feng Zhang(张峰), Sima Dimitrijev, Ji-Sheng Han(韩吉胜), Guo-Guo Yan(闫果果), Zheng-Xin Wen(温正欣), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Xing-Fang Liu(刘兴昉), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平) |
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Comparative study of electrical characteristics for n-type 4H-SiC planar and trench MOS capacitors annealed in ambient NO |
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Chin. Phys. B
2017 Vol.26 (10): 107101-107101
[Abstract]
(577)
[HTML 1 KB]
[PDF 1086 KB]
(369)
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68802 |
Zhi Qiao(乔治), Jian-Li Ji(冀建利), Yan-Li Zhang(张彦立), Hu Liu(刘虎), Tong-Kai Li(李同锴) |
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Influence of interface states, conduction band offset, and front contact on the performance of a-SiC: H(n)/c-Si(p) heterojunction solar cells |
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Chin. Phys. B
2017 Vol.26 (6): 68802-068802
[Abstract]
(737)
[HTML 1 KB]
[PDF 392 KB]
(499)
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48104 |
You-Peng Xiao(肖友鹏), Xiu-Qin Wei(魏秀琴), Lang Zhou(周浪) |
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Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell |
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Chin. Phys. B
2017 Vol.26 (4): 48104-048104
[Abstract]
(635)
[HTML 1 KB]
[PDF 367 KB]
(352)
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123101 |
Hong-Xia Liu(柳红霞), Fu-Ling Tang(汤富领), Hong-Tao Xue(薛红涛), Yu Zhang(张宇), Yu-Wen Cheng(程育汶), Yu-Dong Feng(冯煜东) |
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Lattice structures and electronic properties of WZ-CuInS2/WZ-CdS interface from first-principles calculations |
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Chin. Phys. B
2016 Vol.25 (12): 123101-123101
[Abstract]
(636)
[HTML 1 KB]
[PDF 3247 KB]
(367)
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107306 |
Hong Wen-Ting (洪文婷), Han Wei-Hua (韩伟华), Lyu Qi-Feng (吕奇峰), Wang Hao (王昊), Yang Fu-Hua (杨富华) |
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Fermi level pinning effects at gate-dielectric interfaces influenced by interface state densities |
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Chin. Phys. B
2015 Vol.24 (10): 107306-107306
[Abstract]
(554)
[HTML 1 KB]
[PDF 325 KB]
(899)
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88504 |
Tang Lan-Feng (汤兰凤), Yu Guang (于广), Lu Hai (陆海), Wu Chen-Fei (武辰飞), Qian Hui-Min (钱慧敏), Zhou Dong (周东), Zhang Rong (张荣), Zheng You-Dou (郑有炓), Huang Xiao-Ming (黄晓明) |
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Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress |
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Chin. Phys. B
2015 Vol.24 (8): 88504-088504
[Abstract]
(860)
[HTML 1 KB]
[PDF 398 KB]
(979)
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77307 |
Qian Hui-Min (钱慧敏), Yu Guang (于广), Lu Hai (陆海), Wu Chen-Fei (武辰飞), Tang Lan-Feng (汤兰凤), Zhou Dong (周东), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Liao (郑有炓), Huang Xiao-Ming (黄晓明) |
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Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors |
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Chin. Phys. B
2015 Vol.24 (7): 77307-077307
[Abstract]
(684)
[HTML 1 KB]
[PDF 552 KB]
(473)
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77301 |
Tang Fu-Ling (汤富领), Liu Ran (刘冉), Xue Hong-Tao (薛红涛), Lu Wen-Jiang (路文江), Feng Yu-Dong (冯煜东), Rui Zhi-Yuan (芮执元), Huang Min (黄敏) |
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Lattice structures and electronic properties of CIGS/CdS interface：First-principles calculations |
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Chin. Phys. B
2014 Vol.23 (7): 77301-077301
[Abstract]
(541)
[HTML 1 KB]
[PDF 763 KB]
(1279)
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47303 |
H. M. Baran, A. Tataroğlu |
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Determination of interface states and their time constant for Au/SnO2/n-Si (MOS) capacitors using admittance measurements |
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Chin. Phys. B
2013 Vol.22 (4): 47303-047303
[Abstract]
(656)
[HTML 1 KB]
[PDF 884 KB]
(1914)
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25201 |
Yang Yan(杨雁), Li Sheng-Tao(李盛涛), Ding Can(丁璨) , and Cheng Peng-Fei(成鹏飞) |
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Electronic relaxation of deep bulk trap and interface state in ZnO ceramics |
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Chin. Phys. B
2011 Vol.20 (2): 25201-025201
[Abstract]
(1478)
[HTML 1 KB]
[PDF 697 KB]
(1397)
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97106 |
Wang Shou-Guo(王守国), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) |
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Parameter analysis for gate metal–oxide–semiconductor structures of ion-implanted 4H silicon carbide metal–semiconductor field-effect transistors |
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Chin. Phys. B
2010 Vol.19 (9): 97106-097106
[Abstract]
(1629)
[HTML 0 KB]
[PDF 486 KB]
(630)
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87201 |
Pang Fei(庞斐), Liang Xue-Jin(梁学锦), Liao Zhao-Liang(廖昭亮), Yin Shu-Li(尹树力), and Chen Dong-Min(陈东敏) |
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Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111) |
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Chin. Phys. B
2010 Vol.19 (8): 87201-087201
[Abstract]
(2185)
[HTML 1 KB]
[PDF 191 KB]
(984)
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67102 |
Zhang You-Run(张有润), Zhang Bo(张波), Li Zhao-Ji(李肇基), and Deng Xiao-Chuan(邓小川) |
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Two-dimensional analysis of the interface states effects on current gain for 4H－SiC bipolar junction transistor |
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Chin. Phys. B
2010 Vol.19 (6): 67102-067102
[Abstract]
(1733)
[HTML 1 KB]
[PDF 515 KB]
(996)
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1614 |
Liu Fang(刘芳), Wang Tao(王涛), Shen Bo(沈波), Huang Sen(黄森), Lin Fang(林芳), Ma Nan(马楠), Xu Fu-Jun(许福军), Wang Peng(王鹏), and Yao Jian-Quan(姚建铨) |
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The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact |
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Chin. Phys. B
2009 Vol.18 (4): 1614-1617
[Abstract]
(1518)
[HTML 1 KB]
[PDF 171 KB]
(838)
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1817 |
Huang Wei-Qi(黄伟其), Xu Li(许丽), Wang Hai-Xu(王海旭), Jin Feng(金峰), Wu Ke-Yue(吴克跃), Liu Shi-Rong(刘世荣), Qin Cao-Jian(秦朝建), and Qin Shui-Jie(秦水介) |
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Stimulated photoluminescence emission and trap states in Si/SiO2 interface formed by irradiation of laser |
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Chin. Phys. B
2008 Vol.17 (5): 1817-1820
[Abstract]
(1204)
[HTML 1 KB]
[PDF 523 KB]
(669)
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1140 |
Cao Yan-Rong(曹艳荣), Ma Xiao-Hua(马晓华), Hao Yue(郝跃), Zhang Yue(张月), Yu Lei(于磊), Zhu Zhi-Wei(朱志炜), and Chen Hai-Feng(陈海峰) |
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Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs |
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Chin. Phys. B
2007 Vol.16 (4): 1140-1144
[Abstract]
(1641)
[HTML 0 KB]
[PDF 267 KB]
(985)
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725 |
Huang Wei-Qi(黄伟其), Liu Shi-Rong(刘世荣), Xu Li(许丽), Wu Ke-Yue(吴克跃), Qin Cao-Jian(秦朝建), and Cai Sao-Hong(蔡绍洪) |
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Low-dimensional structures formed by irradiation of laser |
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Chin. Phys. B
2007 Vol.16 (3): 725-729
[Abstract]
(1467)
[HTML 1 KB]
[PDF 2028 KB]
(799)
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3502 |
Wang Yan-Gang(王彦刚), Xu Ming-Zhen(许铭真), and Tan Chang-Hua(谭长华) |
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Low voltage substrate current: a monitor for interface states generation in ultra-thin oxide n-OSFETs under constant voltage stresses |
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Chin. Phys. B
2007 Vol.16 (11): 3502-3506
[Abstract]
(1668)
[HTML 1 KB]
[PDF 882 KB]
(565)
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1644 |
Liu Hong-Xia (刘红侠), Hao Yue (郝跃), Hawkins I. D., Peaker A. R. |
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Hot-carrier degradation characteristics and explanation in 0.25μm PMOSFETs |
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Chin. Phys. B
2005 Vol.14 (8): 1644-1648
[Abstract]
(1289)
[HTML 1 KB]
[PDF 252 KB]
(505)
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94 |
Wang Shou-Guo (王守国), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) |
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Parameter extraction for a Ti/4H-SiC Schottky diode |
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Chin. Phys. B
2003 Vol.12 (1): 94-96
[Abstract]
(1516)
[HTML 1 KB]
[PDF 216 KB]
(628)
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189 |
Ren Hong-xia (任红霞), Hao Yue (郝跃) |
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HOT-CARRIER GENERATION MECHANISM AND HOT-CARRIER EFFECT IMMUNITY IN DEEP-SUB-MICRON GROOVED-GATE PMOSFETS |
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Chin. Phys. B
2001 Vol.10 (3): 189-193
[Abstract]
(1124)
[HTML 0 KB]
[PDF 257 KB]
(563)
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