AbstractThe low voltage substrate current (Ib) has been studied based on generation kinetics and used as a monitor of interface states (Nit) generation for ultra-thin oxide n-MOSFETs under constant voltage stress. It is found that the low voltage Ibis formed by electrons tunnelling through interface states, and the variations of Ib(Ib) are proportional to variations of Nit (Nit). The Nitenergy distributions were determined by differentiating Nit(Vg). The results have been compared with that measured by using gate diode technique.
(Semiconductor-device characterization, design, and modeling)
Cite this article:
Wang Yan-Gang(王彦刚), Xu Ming-Zhen(许铭真), and Tan Chang-Hua(谭长华) Low voltage substrate current: a monitor for interface states generation in ultra-thin oxide n-OSFETs under constant voltage stresses 2007 Chinese Physics 16 3502
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