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Other articles related with "SiGe"：
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16104 |
Ya-Hui Feng(冯亚辉), Hong-Xia Guo(郭红霞), Yi-Wei Liu(刘益维), Xiao-Ping Ouyang(欧阳晓平), Jin-Xin Zhang(张晋新), Wu-Ying Ma(马武英), Feng-Qi Zhang(张凤祁), Ru-Xue Bai(白如雪), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
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Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect |
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Chin. Phys. B
2024 Vol.33 (1): 16104-16104
[Abstract]
(73)
[HTML 0 KB]
[PDF 2002 KB]
(12)
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98503 |
Xiaoyu Pan(潘霄宇), Hongxia Guo(郭红霞), Yahui Feng(冯亚辉), Yinong Liu(刘以农), Jinxin Zhang(张晋新), Jun Fu(付军), and Guofang Yu(喻国芳) |
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Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications |
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Chin. Phys. B
2023 Vol.32 (9): 98503-098503
[Abstract]
(127)
[HTML 1 KB]
[PDF 6512 KB]
(80)
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96104 |
Xinxin Li(李欣欣), Zhen Deng(邓震), Sen Wang(王森), Jinbiao Liu(刘金彪), Jun Li(李俊), Yang Jiang(江洋), Ziguang Ma(马紫光), Chunhua Du(杜春花), Haiqiang Jia(贾海强), Wenxin Wang(王文新), and Hong Chen(陈弘) |
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Sphere-shaped SiGe micro/nanostructures with tunable Ge composition and size formed by laser irradiation |
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Chin. Phys. B
2021 Vol.30 (9): 96104-096104
[Abstract]
(377)
[HTML 1 KB]
[PDF 1887 KB]
(144)
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87303 |
Ying Zan(昝颖), Yong-Liang Li(李永亮), Xiao-Hong Cheng(程晓红), Zhi-Qian Zhao(赵治乾), Hao-Yan Liu(刘昊炎), Zhen-Hua Hu(吴振华), An-Yan Du(都安彦), Wen-Wu Wang(王文武) |
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High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing |
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Chin. Phys. B
2020 Vol.29 (8): 87303-087303
[Abstract]
(549)
[HTML 0 KB]
[PDF 2270 KB]
(90)
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57504 |
Huanming Wang(王焕明), Sen Sun(孙森), Jiayin Xu(徐家胤), Xiaowei Lv(吕晓伟), Yuan Wang(汪渊), Yong Peng(彭勇), Xi Zhang(张析), Gang Xiang(向钢) |
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Microstructure and ferromagnetism of heavily Mn doped SiGe thin flims |
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Chin. Phys. B
2020 Vol.29 (5): 57504-057504
[Abstract]
(652)
[HTML 1 KB]
[PDF 3605 KB]
(249)
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28501 |
Xian-Cheng Liu(刘先程), Jia-Jun Ma(马佳俊), Hong-Yun Xie(谢红云), Pei Ma(马佩), Liang Chen(陈亮), Min Guo(郭敏), Wan-Rong Zhang(张万荣) |
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Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor |
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Chin. Phys. B
2020 Vol.29 (2): 28501-028501
[Abstract]
(548)
[HTML 1 KB]
[PDF 515 KB]
(202)
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76106 |
Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏), Hong-Xia Guo(郭红霞) |
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Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor |
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Chin. Phys. B
2019 Vol.28 (7): 76106-076106
[Abstract]
(600)
[HTML 1 KB]
[PDF 1215 KB]
(195)
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108501 |
Jin-Xin Zhang(张晋新), Hong-Xia Guo(郭红霞), Xiao-Yu Pan(潘霄宇), Qi Guo(郭旗), Feng-Qi Zhang(张凤祁), Juan Feng(冯娟), Xin Wang(王信), Yin Wei(魏莹), Xian-Xiang Wu(吴宪祥) |
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Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor |
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Chin. Phys. B
2018 Vol.27 (10): 108501-108501
[Abstract]
(583)
[HTML 1 KB]
[PDF 1529 KB]
(180)
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98502 |
Ya-Bin Sun(孙亚宾), Xiao-Jin Li(李小进), Jin-Zhong Zhang(张金中), Yan-Ling Shi(石艳玲) |
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Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout |
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Chin. Phys. B
2017 Vol.26 (9): 98502-098502
[Abstract]
(812)
[HTML 0 KB]
[PDF 612 KB]
(243)
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88502 |
Jin-Xin Zhang(张晋新), Chao-Hui He(贺朝会), Hong-Xia Guo(郭红霞), Pei Li(李培), Bao-Long Guo(郭宝龙), Xian-Xiang Wu(吴宪祥) |
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Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor |
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Chin. Phys. B
2017 Vol.26 (8): 88502-088502
[Abstract]
(655)
[HTML 1 KB]
[PDF 714 KB]
(209)
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127101 |
Zong-Yan Zhao(赵宗彦), Wen Yang(杨雯), Pei-Zhi Yang(杨培志) |
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Electronic structure of O-doped SiGe calculated by DFT+U method |
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Chin. Phys. B
2016 Vol.25 (12): 127101-127101
[Abstract]
(563)
[HTML 1 KB]
[PDF 89191 KB]
(279)
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124401 |
Qiang Fu(付强), Wan-Rong Zhang(张万荣), Dong-Yue Jin(金冬月), Yan-Xiao Zhao(赵彦晓), Xiao Wang(王肖) |
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A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT |
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Chin. Phys. B
2016 Vol.25 (12): 124401-124401
[Abstract]
(510)
[HTML 1 KB]
[PDF 1748 KB]
(265)
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48501 |
Ya-Bin Sun(孙亚宾), Jun Fu(付军), Yu-Dong Wang(王玉东), Wei Zhou(周卫), Wei Zhang(张伟), and Zhi-Hong Liu(刘志弘) |
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Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model |
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Chin. Phys. B
2016 Vol.25 (4): 48501-048501
[Abstract]
(599)
[HTML 1 KB]
[PDF 319 KB]
(435)
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38501 |
Yan-Xiao Zhao(赵彦晓), Wan-Rong Zhang(张万荣), Xin Huang(黄鑫), Hong-Yun Xie(谢红云), Dong-Yue Jin(金冬月), Qiang Fu(付强) |
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Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors |
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Chin. Phys. B
2016 Vol.25 (3): 38501-038501
[Abstract]
(612)
[HTML 0 KB]
[PDF 347 KB]
(317)
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88502 |
Li Pei (李培), Guo Hong-Xia (郭红霞), Guo Qi (郭旗), Zhang Jin-Xin (张晋新), Xiao Yao (肖尧), Wei Ying (魏莹), Cui Jiang-Wei (崔江维), Wen Lin (文林), Liu Mo-Han (刘默寒), Wang Xin (王信) |
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Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment |
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Chin. Phys. B
2015 Vol.24 (8): 88502-088502
[Abstract]
(655)
[HTML 1 KB]
[PDF 1147 KB]
(346)
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116104 |
Sun Ya-Bin (孙亚宾), Fu Jun (付军), Xu Jun (许军), Wang Yu-Dong (王玉东), Zhou Wei (周卫), Zhang Wei (张伟), Cui Jie (崔杰), Li Gao-Qing (李高庆), Liu Zhi-Hong (刘志弘) |
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Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation |
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Chin. Phys. B
2014 Vol.23 (11): 116104-116104
[Abstract]
(627)
[HTML 1 KB]
[PDF 672 KB]
(405)
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114402 |
Fu Qiang (付强), Zhang Wan-Rong (张万荣), Jin Dong-Yue (金冬月), Ding Chun-Bao (丁春宝), Zhao Yan-Xiao (赵彦晓), Lu Dong (鲁东) |
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Collector optimization for tradeoff between breakdown voltage and cut-off frequency in SiGe HBT |
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Chin. Phys. B
2014 Vol.23 (11): 114402-114402
[Abstract]
(595)
[HTML 1 KB]
[PDF 1131 KB]
(425)
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98803 |
Huang Zhen-Hua (黄振华), Zhang Jian-Jun (张建军), Ni Jian (倪牮), Cao Yu (曹宇), Hu Zi-Yang (胡子阳), Li Chao (李超), Geng Xin-Hua (耿新华), Zhao Ying (赵颖) |
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Numerical simulation of a triple-junction thin-film solar cell based on μc-Si1-xGex：H |
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Chin. Phys. B
2013 Vol.22 (9): 98803-098803
[Abstract]
(864)
[HTML 1 KB]
[PDF 785 KB]
(1019)
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68102 |
Wang Guang-Hong (王光红), Zhao Lei (赵雷), Yan Bao-Jun (闫保军), Chen Jing-Wei (陈静伟), Wang Ge (王革), Diao Hong-Wei (刁宏伟), Wang Wen-Jing (王文静) |
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The investigation of ZnO:Al2O3/metal composite back reflectors in amorphous silicon germanium thin film solar cells |
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Chin. Phys. B
2013 Vol.22 (6): 68102-068102
[Abstract]
(749)
[HTML 1 KB]
[PDF 466 KB]
(624)
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56103 |
Sun Ya-Bin (孙亚宾), Fu Jun (付军), Xu Jun (许军), Wang Yu-Dong (王玉东), Zhou Wei (周卫), Zhang Wei (张伟), Cui Jie (崔杰), Li Gao-Qing (李高庆), Liu Zhi-Hong (刘志弘), Yu Yong-Tao (余永涛), Ma Ying-Qi (马英起), Feng Guo-Qiang (封国强), Han Jian-Wei (韩建伟) |
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A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor |
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Chin. Phys. B
2013 Vol.22 (5): 56103-056103
[Abstract]
(565)
[HTML 1 KB]
[PDF 595 KB]
(584)
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68502 |
Wang Tao(汪涛), Guo Qing(郭清), Liu Yan(刘艳), and Yun Janggn |
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Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS |
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Chin. Phys. B
2012 Vol.21 (6): 68502-068502
[Abstract]
(1465)
[HTML 1 KB]
[PDF 279 KB]
(2026)
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98501 |
Xu Xiao-Bo(徐小波), Xu Kai-Xuan(徐凯选), Zhang He-Ming(张鹤鸣), and Qin Shan-Shan(秦珊珊) |
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A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects |
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Chin. Phys. B
2011 Vol.20 (9): 98501-098501
[Abstract]
(1485)
[HTML 0 KB]
[PDF 140 KB]
(737)
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58503 |
Xu Xiao-Bo(徐小波), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), and Qu Jiang-Tao(屈江涛) |
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Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator |
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Chin. Phys. B
2011 Vol.20 (5): 58503-058503
[Abstract]
(1307)
[HTML 0 KB]
[PDF 433 KB]
(950)
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58502 |
Xu Xiao-Bo (徐小波), Zhang He-Ming (张鹤鸣), Hu Hui-Yong (胡辉勇), Ma Jian-Li (马建立) |
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Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors |
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Chin. Phys. B
2011 Vol.20 (5): 58502-058502
[Abstract]
(1496)
[HTML 0 KB]
[PDF 468 KB]
(1261)
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108502 |
Xu Xiao-Bo(徐小波), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇) Li Yu-Chen(李妤晨), and Qu Jiang-Tao(屈江涛) |
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Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator |
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Chin. Phys. B
2011 Vol.20 (10): 108502-108502
[Abstract]
(1451)
[HTML 0 KB]
[PDF 503 KB]
(963)
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18502 |
Xu Xiao-Bo(徐小波), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), Ma Jian-Li(马建立), and Xu Li-Jun(许立军) |
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Analytical base–collector depletion capacitance in vertical SiGe heterojunction bipolar transistors fabricated on CMOS-compatible silicon on insulator |
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Chin. Phys. B
2011 Vol.20 (1): 18502-018502
[Abstract]
(1607)
[HTML 0 KB]
[PDF 263 KB]
(1014)
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127303 |
Liu Hong-Xia(刘红侠), Li Bin(李斌), Li Jin(李劲), Yuan Bo(袁博), and Hao Yue(郝跃) |
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Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET |
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Chin. Phys. B
2010 Vol.19 (12): 127303-127303
[Abstract]
(1542)
[HTML 1 KB]
[PDF 973 KB]
(843)
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117309 |
Qin Shan-Shan(秦珊珊), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), Dai Xian-Ying(戴显英), Xuan Rong-Xi(宣荣喜), and Shu Bin(舒斌) |
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An analytical threshold voltage model for dual-strained channel PMOSFET |
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Chin. Phys. B
2010 Vol.19 (11): 117309-117309
[Abstract]
(1204)
[HTML 0 KB]
[PDF 694 KB]
(880)
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303 |
Ma Li(马丽) and Gao Yong(高勇) |
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A super junction SiGe low-loss fast switching power diode |
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Chin. Phys. B
2009 Vol.18 (1): 303-308
[Abstract]
(1240)
[HTML 1 KB]
[PDF 1913 KB]
(1139)
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3479 |
Lin Gui-Jiang(林桂江), Lai Hong-Kai(赖虹凯), Li Cheng(李成), Chen Song-Yan(陈松岩), and Yu Jin-Zhong(余金中) |
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Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells |
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Chin. Phys. B
2008 Vol.17 (9): 3479-3483
[Abstract]
(1439)
[HTML 1 KB]
[PDF 212 KB]
(630)
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3448 |
Zhang Li-Ping(张丽平), Zhang Jian-Jun(张建军), Shang Ze-Ren(尚泽仁), Hu Zeng-Xin(胡增鑫), Geng Xin-Hua(耿新华), and Zhao Ying(赵颖) |
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Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition |
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Chin. Phys. B
2008 Vol.17 (9): 3448-3452
[Abstract]
(1400)
[HTML 1 KB]
[PDF 1358 KB]
(647)
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4635 |
Gao Yong (高勇), Liu Jing (刘静), Yang Yuan (杨媛) |
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Research on reverse recovery characteristics of SiGeC p-i-n diodes |
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Chin. Phys. B
2008 Vol.17 (12): 4635-4639
[Abstract]
(1426)
[HTML 0 KB]
[PDF 236 KB]
(862)
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3820 |
Zhang Xue-Feng(张雪锋), Xu Jing-Ping (徐静平), Lai Pui-To(黎沛涛), Li Chun-Xia(李春霞), and Guan Jian-Guo(官建国) |
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Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack |
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Chin. Phys. B
2007 Vol.16 (12): 3820-3826
[Abstract]
(1351)
[HTML 1 KB]
[PDF 785 KB]
(669)
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1339 |
Jiang Tao (姜涛), Zhang He-Ming (张鹤鸣), Wang Wei (王伟), Hu Hui-Yong (胡辉勇), Dai Xian-Ying (戴显英) |
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Novel vertical stack HCMOSFET with strained SiGe/Si quantum channel |
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Chin. Phys. B
2006 Vol.15 (6): 1339-1345
[Abstract]
(1805)
[HTML 0 KB]
[PDF 294 KB]
(652)
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1439 |
Hu Hui-Yong (胡辉勇), Zhang He-Ming (张鹤鸣), Dai Xian-Ying (戴显英), Jia Xin-Zhang (贾新章), Cui Xiao-Ying (崔晓英), Wang Wei (王伟), Ou Jian-Feng (区健锋), Wang Xi-Yuan (王喜媛) |
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Model of transit time for SiGe HBT collector junction depletion-layer |
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Chin. Phys. B
2005 Vol.14 (7): 1439-1443
[Abstract]
(1213)
[HTML 0 KB]
[PDF 251 KB]
(707)
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1114 |
Ma Li (马丽), Gao Yong (高勇), Wang Cai-Lin (王彩琳) |
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A novel type of ultra fast and ultra soft recovery SiGe/Si heterojunction power diode with an ideal ohmic contact |
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Chin. Phys. B
2004 Vol.13 (7): 1114-1119
[Abstract]
(1088)
[HTML 1 KB]
[PDF 296 KB]
(467)
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