Microstructure and ferromagnetism of heavily Mn doped SiGe thin flims

doi:10.1088/1674-1056/ab8219

Abstract Heavily Mn-doped SiGe thin films were grown by radio frequency magnetron sputtering and then treated by post-growth thermal annealing. Structural characterizations reveal the coexistence of Mn-diluted SiGe crystals and Mn-rich nanoclusters in the annealed films. Magnetic measurements indicate the ferromagnetic ordering of the annealed samples above room temperature . The data suggest that the ferromagnetism is probably mainly contributed by the Ge-rich nanoclusters and partially contributed by the tensile-strained Mn-diluted SiGe crystals. The results may be useful for room temperature spintronic applications based on group IV semiconductors.

Keywords: Mn-doped SiGe diluted magnetic semiconductor nanoclusters ferromagnetism

Received: 14 February 2020
Revised: 12 March 2020
Accepted manuscript online:

PACS:	75.50.Pp	(Magnetic semiconductors)
	78.40.Fy	(Semiconductors)
	75.75.-c	(Magnetic properties of nanostructures)

Fund: Project supported by the National Key R&D Program of China (Grant No. 2017YFB0405702) and the National Natural Science Foundation of China (Grant No. 51671137).

Corresponding Authors: Yuan Wang, Gang Xiang
E-mail: wyuan@scu.edu.cn;gxiang@scu.edu.cn

Cite this article:

Huanming Wang(王焕明), Sen Sun(孙森), Jiayin Xu(徐家胤), Xiaowei Lv(吕晓伟), Yuan Wang(汪渊), Yong Peng(彭勇), Xi Zhang(张析), Gang Xiang(向钢) Microstructure and ferromagnetism of heavily Mn doped SiGe thin flims 2020 Chin. Phys. B 29 057504

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Microstructure and ferromagnetism of heavily Mn doped SiGe thin flims

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