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Thorough numerical simulations of silicon heterojunction solar cells focusing on the sun-side-doped layer |
| Jiufang Han(韩久放)1,2,3,†, Yimeng Song(宋祎萌)4,†, Xiran Yu(于夕然)1,2,3, Conghui Jiang(姜聪慧)5, Wenxin Wang(王文新)1,6, Haiqiang Jia(贾海强)1,2,3,7, Chunhua Du(杜春花)1,3,6,‡, and Hong Chen(陈弘)1,2,3,6,7,§ |
1 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 Second Affiliation University of Chinese Academy of Sciences, Beijing 100049, China;
3 Third Affiliation School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
4 Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516000, China;
5 Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China;
6 The Yangtze River Delta Physics Research Center, Liyang 213000, China;
7 Songshan Lake Materials Laboratory, Dongguan 523808, China |
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Abstract To improve the photovoltaic conversion efficiency (PCE) of silicon heterojunction (SHJ) solar cells, this study focuses on optimizing the physical parameters of the sun-side-doped layer and proposes strategies to address the challenges posed by Fermi level pinning in wide bandgap designs. Using AFORS-HET simulations, we systematically investigate the effects of bandgap width, doping concentration, and defect state distribution on the energy band structure, interface electric field, and carrier transport dynamics. The results reveal that maintaining the Fermi level within 0.3 eV of the conduction band is essential for optimal device performance. A wider bandgap (> 1.8 eV) enhances the utilization of short-wavelength light and significantly suppresses interface recombination, leading to an increase in short-circuit current density (Jsc) by 0.8 mA/cm2. This benefit comes with a delicate balance between minimizing defect state density and improving doping efficiency. This study provides theoretical insights into the optimization of doped layer physical parameters and proposes practical solutions, including nano-crystallization and low-doping interface strategies, to improve the performance of SHJ solar cells and support industrial applications.
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Received: 22 April 2025
Revised: 22 April 2025
Accepted manuscript online: 23 May 2025
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PACS:
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88.40.hj
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(Efficiency and performance of solar cells)
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52.50.-b
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(Plasma production and heating)
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61.72.uf
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(Ge and Si)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61991441 and 62004218), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB01000000), and the Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2021005). |
Corresponding Authors:
Chunhua Du, Hong Chen
E-mail: duchunhua@iphy.ac.cn;hchen@iphy.ac.cn
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Cite this article:
Jiufang Han(韩久放), Yimeng Song(宋祎萌), Xiran Yu(于夕然), Conghui Jiang(姜聪慧), Wenxin Wang(王文新), Haiqiang Jia(贾海强), Chunhua Du(杜春花), and Hong Chen(陈弘) Thorough numerical simulations of silicon heterojunction solar cells focusing on the sun-side-doped layer 2025 Chin. Phys. B 34 118801
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