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Observation of distinct Kondo effect and anomalous Hall effect in V self-intercalated layered antiferromagnet V5S8 crystals |
| Yaofeng Xie(谢耀锋)1,2,†, Senhao Lv(吕森浩)1,†, Qi Qi(齐琦)1,2, Guojing Hu(胡国静)1, Ke Zhu(祝轲)1,2, Zhen Zhao(赵振)1, Guoyu Xian(冼国裕)3, Yechao Han(韩烨超)2, Ruwen Wang(王汝文)1,2, Chenyu Bai(白晨宇)1,2, Lihong Bao(鲍丽宏)1,2, Xiao Lin(林晓)2, Hui Guo(郭辉)1,2,‡, Haitao Yang(杨海涛)1,2,§, and Hong-Jun Gao(高鸿钧)1,2 |
1 Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China |
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Abstract Vanadium-based transition metal chalcogenides V$_{{m}}{X}_{{n}}$ ($X ={\rm S}$, Se, Te) with their distinctive quantum effects, tunable magnetism, spin-orbit coupling, and high carrier mobility are a valuable platform to explore the interplay between magnetism and electronic correlations, especially with tunable structural phases and magnetic properties through stoichiometric variations, making them ideal candidates for advanced device applications. Here, we report the synthesis of high-quality V$_{{5+x}}$S$_{8}$ single crystals with different concentrations of self-intercalated vanadium. V$_{{5+x}}$S$_{{8}}$ crystals show an antiferromagnetic behavior and a spin-flop-like transition below $T_{\rm N}$ of 30.6 K. The high-quality V$_{{5+x}}$S$_{{8}}$ single crystals exhibit a large negative magnetoresistance of 12.3% at 2 K. Interestingly, V$_{{5+x}}$S$_{{8}}$ crystals show an obvious low-temperature resistance upturn that gradually levels off with the increasing magnetic field, attributed to the Kondo effect arising from the interaction between conduction electrons and embedded vanadium magnetic impurities. With increasing V doping, the antiferromagnetic interactions intensify, weakening the coupling between the local moments and conduction electrons, which in turn lowers the Kondo temperature ($T_{\rm K}$). Furthermore, the anomalous Hall effect is observed in V$_{{5.73}}$S$_{{8}}$, with an anomalous Hall conductivity (AHC) of 50.46 $\Omega^{{-1}}\cdot$cm$^-1$ and anomalous Hall angle of 0.73% at 2 K. Our findings offer valuable insights into the mechanisms of the Kondo effect and anomalous Hall effect in self-intercalated transition metal chalcogenides with complex magnetism and electronic correlation effects.
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Received: 24 March 2025
Revised: 20 April 2025
Accepted manuscript online: 08 May 2025
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PACS:
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73.43.Qt
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(Magnetoresistance)
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| Fund: Project supported by the National Key R&D Program of China (Grant No. 2022YFA1204100), the National Natural Science Foundation of China (Grant Nos. 62488201 and 1240041502), the CAS Project for Young Scientists in Basic Research (Grant No. YSBR-003), the Chinese Academy of Sciences (Grant No. XDB33030100), and the Innovation Program of Quantum Science and Technology (Grant No. 2021ZD0302700). |
Corresponding Authors:
Hui Guo, Haitao Yang
E-mail: guohui@iphy.ac.cn;htyang@iphy.ac.cn
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Cite this article:
Yaofeng Xie(谢耀锋), Senhao Lv(吕森浩), Qi Qi(齐琦), Guojing Hu(胡国静), Ke Zhu(祝轲), Zhen Zhao(赵振), Guoyu Xian(冼国裕), Yechao Han(韩烨超), Ruwen Wang(王汝文), Chenyu Bai(白晨宇), Lihong Bao(鲍丽宏), Xiao Lin(林晓), Hui Guo(郭辉), Haitao Yang(杨海涛), and Hong-Jun Gao(高鸿钧) Observation of distinct Kondo effect and anomalous Hall effect in V self-intercalated layered antiferromagnet V5S8 crystals 2025 Chin. Phys. B 34 087303
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