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A design for an antiferromagnetic material based on self-assembly for information storage |
| Si-Yan Gao(高思妍)1, Yi-Feng Zheng(郑益峰)2, Shu-Qiang He(何述强)3, Haiping Fang(方海平)3,†, and Yue-Yu Zhang(张越宇)2,‡ |
1 School of Physics and School of Material Science and Engineering, East China University of Science and Technology, Shanghai 200237, China;
2 Wenzhou Institute, University of Chinese Academy of Sciences, Wenzhou 325001, China;
3 School of Physics, East China University of Science and Technology, Shanghai 200237, China |
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Abstract Antiferromagnetic (AFM) spintronics have sparked extensive research interest in the field of information storage due to the considerable advantages offered by antiferromagnets, including non-volatile data storage, higher storage density, and accelerating data processing. However, the manipulation and detection of internal AFM order in antiferromagnets hinders their applications in spintronic devices. Here, we proposed a design idea for an AFM material that is self-assembled from one-dimensional (1D) ferromagnetic (FM) chains. To validate this idea, we screened a two-dimensional (2D) self-assembled CrBr$_{2}$ antiferromagnet of an AFM semiconductor from a large amount of data. This 2D CrBr$_{2}$ antiferromagnet is composed of 1D FM CrBr$_{2}$ chains that are arranged in a staggered and parallel configuration. In this type of antiferromagnet, the write-data operation of information is achieved in 1D FM chains, followed by a self-assembly process driving the assembly of 1D FM chains into an antiferromagnet. These constituent 1D FM chains become decoupled by external perturbations, such as heat, pressure, strain, etc., thereby realizing the read-data operation of information. We anticipate that this antiferromagnet, composed of 1D FM chains, can be realized not only in the 1D to 2D system, but also is expected to expand to 2D to three-dimensional (3D) system, and even 1D to 3D system.
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Received: 07 January 2025
Revised: 18 March 2025
Accepted manuscript online: 31 March 2025
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PACS:
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75.50.Ee
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(Antiferromagnetics)
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81.16.Dn
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(Self-assembly)
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72.80.Ga
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(Transition-metal compounds)
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71.15.Mb
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(Density functional theory, local density approximation, gradient and other corrections)
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71.20.-b
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(Electron density of states and band structure of crystalline solids)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 12435001, 12304006, and 12404265), the Natural Science Foundation of Shanghai, China (Grant No. 23JC1401400), the Fundamental Research Funds for the Central Universities of East China University, the Natural Science Foundation of WIUCAS (Grant No. WIUCASQD2023004), and the Natural Science Foundation of Wenzhou (Grant No. L2023005). |
Corresponding Authors:
Haiping Fang, Yue-Yu Zhang
E-mail: fanghaiping@sinap.ac.cn;zhangyy@wiucas.ac.cn
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Cite this article:
Si-Yan Gao(高思妍), Yi-Feng Zheng(郑益峰), Shu-Qiang He(何述强), Haiping Fang(方海平), and Yue-Yu Zhang(张越宇) A design for an antiferromagnetic material based on self-assembly for information storage 2025 Chin. Phys. B 34 067504
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