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Scalable preparation of water-soluble ink of few-layered WSe2 nanosheets for large-area electronics |
Guoyu Xian(冼国裕)1,2, Jianshuo Zhang(张建烁)2,3, Li Liu(刘丽)1, Jun Zhou(周俊)2, Hongtao Liu(刘洪涛)2, Lihong Bao(鲍丽宏)2, Chengmin Shen(申承民)2, Yongfeng Li(李永峰)3, Zhihui Qin(秦志辉)1, Haitao Yang(杨海涛)2 |
1 Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China; 2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; 3 State Key Laboratory of Heavy Oil Processing, China University of Petroleum, Beijing 102249, China |
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Abstract Few-layer two-dimensional (2D) semiconductor nanosheets with a layer-dependent band gap are attractive building blocks for large-area thin-film electronics. A general approach is developed to fast prepare uniform and phase-pure 2H-WSe2 semiconducting nanosheets at a large scale, which involves the supercritical carbon dioxide (SC-CO2) treatment and a mild sonication-assisted exfoliation process in aqueous solution. The as-prepared 2H-WSe2 nanosheets preserve the intrinsic physical properties and intact crystal structures, as confirmed by Raman, x-ray photoelectron spectroscopy (XPS), and scanning transmission electron microscope (STEM). The uniform 2H-WSe2 nanosheets can disperse well in water for over six months. Such good dispersivity and uniformity enable these nanosheets to self-assembly into thickness-controlled thin films for scalable fabrication of large-area arrays of thin-film electronics. The electronic transport and photoelectronic properties of the field-effect transistor based on the self-assembly 2H-WSe2 thin film have also been explored.
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Received: 27 March 2020
Revised: 02 April 2020
Accepted manuscript online:
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PACS:
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68.65.-k
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(Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)
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62.23.Kn
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(Nanosheets)
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81.16.Dn
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(Self-assembly)
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77.55.df
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(For silicon electronics)
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Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51771224, 51772087, and 51471185), the National Key R&D Program of China (Grant Nos. 2016YFJC020013 and 2018FYA0305800), and Fujian Institute of Innovation, Chinese Academy of Sciences. |
Corresponding Authors:
Haitao Yang, Zhihui Qin
E-mail: htyang@iphy.ac.cn;zhqin@hnu.edu.cn
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Cite this article:
Guoyu Xian(冼国裕), Jianshuo Zhang(张建烁), Li Liu(刘丽), Jun Zhou(周俊), Hongtao Liu(刘洪涛), Lihong Bao(鲍丽宏), Chengmin Shen(申承民), Yongfeng Li(李永峰), Zhihui Qin(秦志辉), Haitao Yang(杨海涛) Scalable preparation of water-soluble ink of few-layered WSe2 nanosheets for large-area electronics 2020 Chin. Phys. B 29 066802
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