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Electronic structure of a narrow-gap semiconductor KAg3Te2 |
| Rong Feng(冯荣)1, Haotian Zheng(郑昊天)1, Haoran Liu(刘浩然)1, Binru Zhao(赵彬茹)1, Xunqing Yin(尹训庆)1, Zhihua Liu(刘智华)1, Feng Liu(刘峰)1, Guohua Wang(王国华)1, Xiaofeng Xu(许晓峰)2, Wentao Zhang(张文涛)1,3, Weidong Luo(罗卫东)1, Wei Zhou(周苇)4, and Dong Qian(钱冬)1,5,6,† |
1 Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China;
2 School of Physics, Zhejiang University of Technology, Hangzhou 310023, China;
3 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
4 School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, China;
5 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
6 Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China |
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Abstract KAg$_{3}$Te$_{2}$ with a layered crystal structure has been predicted to be a possible topological insulator. Through electrical transport measurements, we revealed its semiconducting behavior with a narrow band gap of $\sim 0.4$ eV and p-type character. The infrared transmission spectra of single crystals yielded an optical band gap of $\sim 0.3$ eV. Angle-resolved photoemission spectroscopy reveals a bulk energy gap at the Brillouin zone center, with no observable surface state, suggesting that KAg$_{3}$Te$_{2}$ is a topological trivial narrow-gap semiconductor. The experimentally determined effective mass of the holes in KAg$_{3}$Te$_{2 }$ is very small ($\sim 0.12 m_{\rm e}$). The valence band maximum is quasi-two-dimensional, while the conduction band minimum is fully three-dimensional. Such intriguing dimensional anisotropy can be attributed to the distinct orbital contributions from K, Ag, and Te atoms to the respective bands.
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Received: 02 January 2025
Revised: 13 February 2025
Accepted manuscript online: 15 February 2025
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PACS:
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71.20.Nr
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(Semiconductor compounds)
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79.60.-i
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(Photoemission and photoelectron spectra)
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71.20.-b
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(Electron density of states and band structure of crystalline solids)
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| Fund: Project supported by the National Key Research and Development Program of China and the National Natural Science Foundation of China. |
Corresponding Authors:
Dong Qian
E-mail: dqian@sjtu.edu.cn
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Cite this article:
Rong Feng(冯荣), Haotian Zheng(郑昊天), Haoran Liu(刘浩然), Binru Zhao(赵彬茹), Xunqing Yin(尹训庆), Zhihua Liu(刘智华), Feng Liu(刘峰), Guohua Wang(王国华), Xiaofeng Xu(许晓峰), Wentao Zhang(张文涛), Weidong Luo(罗卫东), Wei Zhou(周苇), and Dong Qian(钱冬) Electronic structure of a narrow-gap semiconductor KAg3Te2 2025 Chin. Phys. B 34 047102
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