1 Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China; 2 School of Physics, Zhejiang University of Technology, Hangzhou 310023, China; 3 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; 4 School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, China; 5 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China; 6 Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China
Abstract KAgTe with a layered crystal structure has been predicted to be a possible topological insulator. Through electrical transport measurements, we revealed its semiconducting behavior with a narrow band gap of eV and p-type character. The infrared transmission spectra of single crystals yielded an optical band gap of eV. Angle-resolved photoemission spectroscopy reveals a bulk energy gap at the Brillouin zone center, with no observable surface state, suggesting that KAgTe is a topological trivial narrow-gap semiconductor. The experimentally determined effective mass of the holes in KAgTe is very small (). The valence band maximum is quasi-two-dimensional, while the conduction band minimum is fully three-dimensional. Such intriguing dimensional anisotropy can be attributed to the distinct orbital contributions from K, Ag, and Te atoms to the respective bands.
Rong Feng(冯荣), Haotian Zheng(郑昊天), Haoran Liu(刘浩然), Binru Zhao(赵彬茹), Xunqing Yin(尹训庆), Zhihua Liu(刘智华), Feng Liu(刘峰), Guohua Wang(王国华), Xiaofeng Xu(许晓峰), Wentao Zhang(张文涛), Weidong Luo(罗卫东), Wei Zhou(周苇), and Dong Qian(钱冬) Electronic structure of a narrow-gap semiconductor KAg3Te2 2025 Chin. Phys. B 34 047102
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