Electronic structure and coexisting topological states in ferromagnetic and antiferromagnetic phases of MnBi2Te4 quantum wires

doi:10.1088/1674-1056/ada551

Abstract We theoretically investigate the electronic structure of cylindrical magnetic topological insulator quantum wires in $\mathrm{MnBi_{2}Te_{4}}$. Our study reveals the emergence of topological surface states in the ferromagnetic phase, characterized by spin-polarized subbands resulting from intrinsic magnetization. In the antiferromagnetic phase, we identify the coexistence of three distinct types of topological states, encompassing both surface states and central states.

Keywords: quantum wires $\mathrm{MnBi_{2}Te_{4}}$ magnetic topological insulator electronic structure

Received: 05 December 2024
Revised: 03 January 2025
Accepted manuscript online: 03 January 2025

PACS:	75.70.Ak	(Magnetic properties of monolayers and thin films)
	73.22.-f	(Electronic structure of nanoscale materials and related systems)
	68.65.Fg	(Quantum wells)
	68.60.-p	(Physical properties of thin films, nonelectronic)

Fund: Project sponsored by the Natural Science Foundation of Chongqing, China (Grant No. CSTB2024NSCQMSX0736), the Special Project of Chongqing Technology Innovation and Application Development (Major Project) (Grant No. CSTB2024TIAD-STX0035), and the Research Foundation of Institute for Advanced Sciences of CQUPT (Grant No. E011A2022328).

Corresponding Authors: Jian Li, Jia-Ji Zhu
E-mail: jianli@cqupt.edu.cn;zhujj@cqupt.edu.cn

Cite this article:

Jian Li(李健), Zhu-Cai Yin(尹柱财), Qing-Xu Li(李清旭), and Jia-Ji Zhu(朱家骥) Electronic structure and coexisting topological states in ferromagnetic and antiferromagnetic phases of MnBi₂Te₄ quantum wires 2025 Chin. Phys. B 34 037501

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Electronic structure and coexisting topological states in ferromagnetic and antiferromagnetic phases of MnBi2Te4 quantum wires

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Electronic structure and coexisting topological states in ferromagnetic and antiferromagnetic phases of MnBi₂Te₄ quantum wires