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Regulating Anderson localization with structural defect disorder |
| Mouyang Cheng(程谋阳)1, Haoxiang Chen(陈浩翔)1, and Ji Chen(陈基)1,2,3,4,† |
1 School of Physics, Peking University, Beijing 100871, China;
2 Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China;
3 Frontiers Science Center for Nano-Optoelectronics, Peking University, Beijing 100871, China;
4 Collaborative Innovation Center of Quantum Matter, Beijing 100871, China |
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Abstract Localization due to disorder has been one of the most intriguing theoretical concepts that evolved in condensed matter physics. Here, we expand the theory of localization by considering two types of disorders at the same time, namely, the original Anderson's disorder and the structural defect disorder, which has been suggested to be a key component in recently discovered two-dimensional amorphous materials. While increasing the degree of both disorders could induce localization of wavefunction in real space, we find that a small degree of structural defect disorder can significantly enhance the localization. As the degree of structural defect disorder increases, localized states quickly appear within the extended phase to enter a broad crossover region with mixed phases. We establish two-dimensional diagrams for the wavefunction localization and conductivity to highlight the interplay between the two types of disorders. Our theoretical model provides a comprehensive understanding of localization in two-dimensional amorphous materials and highlights the promising tunability of their transport properties.
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Received: 01 June 2024
Revised: 17 August 2024
Accepted manuscript online: 20 August 2024
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PACS:
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72.15.Rn
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(Localization effects (Anderson or weak localization))
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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61.43.-j
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(Disordered solids)
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61.43.Bn
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(Structural modeling: serial-addition models, computer simulation)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 92165101), the National Key R&D Program of China (Grant No. 2021YFA1400500), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB33000000), and the Beijing Natural Science Foundation (Grant No. JQ22001). |
Corresponding Authors:
Ji Chen
E-mail: ji.chen@pku.edu.cn
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Cite this article:
Mouyang Cheng(程谋阳), Haoxiang Chen(陈浩翔), and Ji Chen(陈基) Regulating Anderson localization with structural defect disorder 2024 Chin. Phys. B 33 107201
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