Hidden Anderson localization in disorder-free Ising–Kondo lattice

doi:10.1088/1674-1056/ab99b0

Abstract

Anderson localization (AL) phenomena usually exist in systems with random potential. However, disorder-free quantum many-body systems with local conservation can also exhibit AL or even many-body localization transition. We show that the AL phase exists in a modified Kondo lattice without external random potential. The density of state, inverse participation ratio and temperature-dependent resistance are computed by classical Monte Carlo simulation, which uncovers an AL phase from the previously studied Fermi liquid and Mott insulator regimes. The occurrence of AL roots from quenched disorder formed by conservative localized moments. Interestingly, a many-body wavefunction is found, which captures elements in all three paramagnetic phases and is used to compute their quantum entanglement. In light of these findings, we expect that the disorder-free AL phenomena can exist in generic translation-invariant quantum many-body systems.

Keywords: Anderson localization Ising-Kondo lattice many-body wavefunction quantum entanglement

Received: 10 February 2020
Revised: 02 June 2020
Accepted manuscript online: 05 June 2020

PACS:	72.15.Rn	(Localization effects (Anderson or weak localization))
	75.30.Mb	(Valence fluctuation, Kondo lattice, and heavy-fermion phenomena)

Corresponding Authors: ^†Corresponding author. E-mail: zhongy@lzu.edu.cn

About author:

†Corresponding author. E-mail: zhongy@lzu.edu.cn

* Project supported in part by the National Natural Science Foundation of China (Grant Nos. 11704166, 11834005, and 11874188).

Cite this article:

Wei-Wei Yang(杨薇薇), Lan Zhang(张欄), Xue-Ming Guo(郭雪明), and Yin Zhong(钟寅)† Hidden Anderson localization in disorder-free Ising–Kondo lattice 2020 Chin. Phys. B 29 107301

Fig. 1.

Finite temperature phase diagram of Ising–Kondo lattice (IKL) model on square lattice (Eq. 1) from classical Monte Carlo (MC) simulation. There exist Fermi liquid (FL), Mott insulator (MI), Néel antiferromagnetic insulator (NAI) and an Anderson localization (AL) phase.

Fig. 2.

Density of state (DOS) of conduction electron N(ω) in (a) FL (J / t = 2), (b) AL (J / t = 8) and (c) MI (J / t = 14) phases at T / t = 0.4.

Fig. 3.

Inverse participation ratio (IPR) of conduction electron IPR(ω) in (a) FL (J / t = 2), (b) AL (J / t = 8) and (c) MI (J / t = 14) phases at T / t = 0.4. (d) Finite-size extrapolation of IPR at Fermi energy ω = 0.

Fig. 4.

Temperature-dependent resistance of conduction electron ρ versus T for different Kondo coupling J / t. Red dots indicate magnetic critical temperature T_c.

Fig. 5.

The DOS and IPR for J / t = 8 at effective temperature T = ∞.

Fig. 6.

The entanglement entropy S_EE of many-body wavefunction (7) for different boundary size L_c between two subsystems and different Kondo coupling J.

Fig. D1.

S_EE and IPR(0) versus chemical potential μ for the doped system with J / t = 8 at T = ∞.

Fig. E1.

DOS of conduction electron N(ω) in MI (J / t = 15) at different temperatures: (a) T / t = 0.1, (b) T / t = 0.4, (c) T / t = 0.8. With increasing temperature, the DOS at Fermi surface increases and the gap decreases.

Fig. E2.

The IPR versus temperature at J / t = 15, which is calculated at thermodynamic limit.

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