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Effect of surface modification on the radiation stability of diamond ohmic contacts |
| Lian-Xi Mu(牟恋希)1, Shang-Man Zhao(赵上熳)1, Peng Wang(王鹏)1, Xiao-Lu Yuan(原晓芦)2, Jin-Long Liu(刘金龙)1,†, Zhi-Fu Zhu(朱志甫)3, Liang-Xian Chen(陈良贤)1, Jun-Jun Wei(魏俊俊)1, Xiao-Ping Ou-Yang(欧阳晓平)4, and Cheng-Ming Li(李成明)1,‡ |
1 Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China;
2 School of Mechanical Engineering, University of Science and Technology Beijing, Beijing 100083, China;
3 School of Information Engineering, Zhengzhou University of Technology, Zhengzhou 450044, China;
4 State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China |
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Abstract The ohmic contact interface between diamond and metal is essential for the application of diamond detectors. Surface modification can significantly affect the contact performance and eliminate the interface polarization effect. However, the radiation stability of a diamond detector is also sensitive to surface modification. In this work, the influence of surface modification technology on a diamond ohmic contact under high-energy radiation was investigated. Before radiation, the specific contact resistivities ($\rho_{\rm c}$) between Ti/Pt/Au-hydrogen-terminated diamond (H-diamond) and Ti/Pt/Au-oxygen-terminated diamond (O-diamond) were $2.0 \times 10^{-4}$ $\Omega \cdot $cm$^{2}$ and $4.3 \times 10^{-3}$ $\Omega \cdot $cm$^{2}$, respectively. After 10 MeV electron radiation, the $\rho_{\rm c}$ of Ti/Pt/Au H-diamond and Ti/Pt/Au O-diamond were $5.3 \times 10^{-3}$ $\Omega \cdot $cm$^{2}$ and $9.1 \times 10^{-3}$ $ \Omega \cdot $cm$^{2}$, respectively. The rates of change of $\rho_{\rm c}$ of H-diamond and O-diamond after radiation were 2550% and 112%, respectively. The electron radiation promotes bond reconstruction of the diamond surface, resulting in an increase in $\rho_{\rm c}$.
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Received: 13 May 2023
Revised: 29 June 2023
Accepted manuscript online: 11 July 2023
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PACS:
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68.47.Fg
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(Semiconductor surfaces)
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71.55.Cn
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(Elemental semiconductors)
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73.40.Cg
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(Contact resistance, contact potential)
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72.20.-i
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(Conductivity phenomena in semiconductors and insulators)
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| Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB3608601). |
Corresponding Authors:
Jin-Long Liu, Cheng-Ming Li
E-mail: liujinlong@ustb.edu.cn;chengmli@mater.ustb.edu.cn
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Cite this article:
Lian-Xi Mu(牟恋希), Shang-Man Zhao(赵上熳), Peng Wang(王鹏), Xiao-Lu Yuan(原晓芦), Jin-Long Liu(刘金龙), Zhi-Fu Zhu(朱志甫), Liang-Xian Chen(陈良贤), Jun-Jun Wei(魏俊俊), Xiao-Ping Ou-Yang(欧阳晓平), and Cheng-Ming Li(李成明) Effect of surface modification on the radiation stability of diamond ohmic contacts 2024 Chin. Phys. B 33 026801
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