1 Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China; 2 School of Mechanical Engineering, University of Science and Technology Beijing, Beijing 100083, China; 3 School of Information Engineering, Zhengzhou University of Technology, Zhengzhou 450044, China; 4 State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China
Abstract The ohmic contact interface between diamond and metal is essential for the application of diamond detectors. Surface modification can significantly affect the contact performance and eliminate the interface polarization effect. However, the radiation stability of a diamond detector is also sensitive to surface modification. In this work, the influence of surface modification technology on a diamond ohmic contact under high-energy radiation was investigated. Before radiation, the specific contact resistivities () between Ti/Pt/Au-hydrogen-terminated diamond (H-diamond) and Ti/Pt/Au-oxygen-terminated diamond (O-diamond) were cm and cm, respectively. After 10 MeV electron radiation, the of Ti/Pt/Au H-diamond and Ti/Pt/Au O-diamond were cm and cm, respectively. The rates of change of of H-diamond and O-diamond after radiation were 2550% and 112%, respectively. The electron radiation promotes bond reconstruction of the diamond surface, resulting in an increase in .
(Conductivity phenomena in semiconductors and insulators)
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB3608601).
Corresponding Authors:
Jin-Long Liu, Cheng-Ming Li
E-mail: liujinlong@ustb.edu.cn;chengmli@mater.ustb.edu.cn
Cite this article:
Lian-Xi Mu(牟恋希), Shang-Man Zhao(赵上熳), Peng Wang(王鹏), Xiao-Lu Yuan(原晓芦), Jin-Long Liu(刘金龙), Zhi-Fu Zhu(朱志甫), Liang-Xian Chen(陈良贤), Jun-Jun Wei(魏俊俊), Xiao-Ping Ou-Yang(欧阳晓平), and Cheng-Ming Li(李成明) Effect of surface modification on the radiation stability of diamond ohmic contacts 2024 Chin. Phys. B 33 026801
[1] Verona C, Ciccognani W, Colangeli S, Limiti E, Marinelli M, Santoni E, Verona-Rinati G, Angelone M, Pillon M, Pompili F, Benetti M, Cannata D and Di Pietrantonio F 2016 IEEE Electron Dev. Lett.37 1597 [2] Yamaguchi T, Umezawa H, Ohmagari S, Koizumi H and Kaneko JH 2021 Appl. Phys. Lett.118 162105 [3] Esposito B, Marocco D, Gandolfo G, et al. 2022 J. Fusion Energy41 22 [4] Qu Y F, Zang L G, Chen W, Hou Y M, Lu J and Luo Y 2022 Rev. Sci. Instrum.93 113507 [5] Zhang Z F, Lin C N, Yang X, Tian Y Z, Gao C J, Li K Y, Zang J H, Yang X G, Dong L and Shan C X 2021 Carbon173 427 [6] Girolami M, Serpente V, Mastellone M, Tardocchi M, Rebai M, Xiu, Q L, Liu J L, Sun Z J, Zhao Y B, Valentini V and Trucchi D M 2022 Carbon189 27 [7] Galbiati A, Lynn S, Oliver K, Schirru F, Nowak T, Marczewska B, Duenas J A, Berjillos R, Martel I and Lavergne L 2009 IEEE Transactions on Nuclear Science56 1863 [8] Wang J C, Chen H, Wan L F, Mu C Y, Liu Y F, Cheng S H, Wang Q D, Li A L and Li H D 2021 Chin. Phys. B30 096803 [9] Su K, Pen Z Y, Zhang J F, Liu L Y, Zhang J C, Zhang Y C, He Q, Zhang C F, Ouyang X P and Hao Y 2020 Appl. Phys. Lett.116 092104 [10] Okhapkin A I, Yunin P A, Arkhipova E A, Kraev S A, Korolyov S A, Drozdov M N and Shashkin V I 2020 Semiconductors54 1056 [11] Hoffman A, Laikhtman A, Ustaze S, Hamou M H, Hedhili M N, Guillotin J P, Le Coat Y and Azria R 2002 J. Appl. Phys.91 4726 [12] Grilj V, Skukan N, Jaksic M, Pomorski M, Kada W, Kamiya T and Ohshima T 2016 Nucl. Instrum. Meth. B372 161 [13] Ade N, Nam T L, Derry T E and Mhlanga S H 2014 Radiat. Phys. Chem.98 155 [14] Hoshino Y, Saito Y and Nakata J 2010 J. Appl. Phys.49 101302 [15] Bergman L and Nemanich R J 1995 J. Appl. Phys.78 6709 [16] Lee E H, Hembree D M, Rao G R and Mansur L K 1993 Phys. Rev. B48 15540 [17] Ostrovskaya L, Perevertailo V, Ralchenko V, Dementjev A and Loginova O 2002 Diam. Relat. Mater.11 845 [18] Tu J L, Shi J D, Chen L X, Liu J L, Li C M and Wei J J 2022 Int. J. Heat Mass Transfer199 123481 [19] Kawarada H 1996 Surf. Sci. Rep.26 205 [20] Berger H H 1972 Solid-State Electronics15 145 [21] Zhao D, Li F N, Liu Z C, Chen X D, Wang Y F, Shao G Q, Zhu T F, Zhang M H, Zhang J W, Wang J J, Wang W and Wang H X 2018 Appl. Surf. Sci.443 361 [22] Chen Y G, Ogura A, Yamasaki S and Okushi H 2004 Diam. Relat. Mater.13 2121 [23] Hirama K, Takayanagi H, Yamauchi S, Yang J H, Kawarada H and Umezawa H 2008 Appl. Phys. Lett.92 112107 [24] Sauerer C, Ertl F, Nebel C E, Stutzmann M, Bergonzo P, Williams O A and Jackman R A 2001 Phys. Status Solidi A186 241 [25] Strobel P, Riedel M, Ristein J and Ley L 2004 Nature430 439 [26] Edmonds M T, Pakes C I, Mammadov S, Zhang W, Tadich A, Ristein J and Ley L 2011 Phys. Status Solidi A208 2062 [27] Maier F, Riedel M, Ristein J and Ley L 2001 Diam. Relat. Mater.10 506 [28] Kono S, Saitou T, Kawata H, Goto T, Kakefuda Y and Komeda T 2009 Surf. Sci.603 860 [29] Maier F, Ristein J and Ley L 2001 Phys. Rev. B64 165411 [30] Zhang S, Liu K, Liu B J, Zhang X H, Qiao P F, Zhao J W, Li Y C, Hao X B, Liang Y, Liang B, Zhang W C, Dai B, Han J C and Zhu J Q 2023 Carbon205 69 [31] Foord J S, Hian L C and Jackman R B 2001 Diam. Relat. Mater.10 710 [32] Bai M J, Liu J L, Jiang H, Li W J, Wei J J, Chen L X, Miao J Y and Li C M 2022 Tribol. Int.176 107910 [33] Wei K T, Li J, Liu B Y, Wu R R, Wei Q, Wu S L, Hu W B and Wang H X 2019 Vacuum172 109046
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