Physical mechanism of oxygen diffusion in the formation of Ga2O3 Ohmic contacts

doi:10.1088/1674-1056/ad01a7

Abstract The formation of low-resistance Ohmic contacts in Ga₂O₃ is crucial for high-performance electronic devices. Conventionally, a titanium/gold (Ti/Au) electrode is rapidly annealed to achieve Ohmic contacts, resulting in mutual diffusion of atoms at the interface. However, the specific role of diffusing elements in Ohmic contact formation remains unclear. In this work, we investigate the contribution of oxygen atom diffusion to the formation of Ohmic contacts in Ga₂O₃. We prepare a Ti/Au electrode on a single crystal substrate and conduct a series of electrical and structural characterizations. Using density functional theory, we construct a model of the interface and calculate the charge density, partial density of states, planar electrostatic potential energy, and I—V characteristics. Our results demonstrate that the oxygen atom diffusion effectively reduces the interface barrier, leading to low-resistance Ohmic contacts in Ga₂O₃. These findings provide valuable insights into the underlying mechanisms of Ohmic contact formation and highlight the importance of considering the oxygen atom diffusion in the design of Ga₂O₃-based electronic devices.

Keywords: Ga₂O₃ Ohmic contacts oxygen diffusion density functional theory

Received: 02 August 2023
Revised: 18 September 2023
Accepted manuscript online: 07 October 2023

PACS:	73.61.Le	(Other inorganic semiconductors)
	73.40.Ns	(Metal-nonmetal contacts)
	66.30.J-	(Diffusion of impurities ?)
	71.15.Mb	(Density functional theory, local density approximation, gradient and other corrections)

Fund: Projects supported by the National Natural Science Foundation of China (Grant Nos. 61874084, 61974119, and U21A20501).

Corresponding Authors: Miao Yu, Ren-Xu Jia
E-mail: myuxidian@163.com;rxjia@mail.xidian.edu.cn

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Su-Yu Xu(徐宿雨), Miao Yu(于淼), Dong-Yang Yuan(袁东阳), Bo Peng(彭博), Lei Yuan(元磊), Yu-Ming Zhang(张玉明), and Ren-Xu Jia(贾仁需) Physical mechanism of oxygen diffusion in the formation of Ga₂O₃ Ohmic contacts 2024 Chin. Phys. B 33 017302

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Physical mechanism of oxygen diffusion in the formation of Ga2O3 Ohmic contacts

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Physical mechanism of oxygen diffusion in the formation of Ga₂O₃ Ohmic contacts