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Chin. Phys. B, 2015, Vol. 24(12): 126801    DOI: 10.1088/1674-1056/24/12/126801

Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC

Zhou Tian-Yu (周天宇)a b, Liu Xue-Chao (刘学超)a, Huang Wei (黄维)a, Zhuo Shi-Yi (卓世异)a, Zheng Yan-Qing (郑燕青)a, Shi Er-Wei (施尔畏)a
a Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;
b Graduate University of Chinese Academy of Sciences, Beijing 100049, China
Abstract  A Ni/Ta bilayer is deposited on n-type 6H-SiC and then annealed at different temperatures to form an ohmic contact. The electrical properties are characterized by I-V curve measurement and the specific contact resistance is extracted by the transmission line method. The phase formation and microstructure of the Ni/Ta bilayer are studied after thermal annealing. The crystalline and microstructure properties are analyzed by using glance incident x-ray diffraction (GIXRD), Raman spectroscopy, and transmission electron microscopy. It is found that the transformation from the Schottky to the Ohmic occurs at 1050 ℃ and the GIXRD results show a distinct phase change from Ta2C to TaC at this temperature. A specific contact resistance of 6.5× 10-5Ω · cm2 is obtained for sample Ni(80 nm)/Ta(20 nm)/6H-SiC after being annealed at 1050 ℃. The formation of the TaC phase is regarded as the main reason for the excellent Ohmic properties of the Ni/Ta contacts to 6H-SiC. Raman and TEM data reveal that the graphite carbon is drastically consumed by the Ta element, which can improve the contact thermal stability. A schematic diagram is proposed to illustrate the microstructural changes of Ni/Ta/6H-SiC when annealed at different temperatures.
Keywords:  SiC      Ohmic contact      Ni/Ta  
Received:  21 April 2015      Revised:  28 July 2015      Accepted manuscript online: 
PACS:  68.47.Fg (Semiconductor surfaces)  
  73.40.Ns (Metal-nonmetal contacts)  
Fund: Project supported by the Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10), the Shanghai Rising-star Program, China (Grant No. 13QA1403800), the Industry-Academic Joint Technological Innovations Fund Project of Jiangsu Province, China (Grant No. BY2011119), and the National High-tech Research and Development Program of China (Grant Nos. 2013AA031603 and 2014AA032602).
Corresponding Authors:  Liu Xue-Chao     E-mail:

Cite this article: 

Zhou Tian-Yu (周天宇), Liu Xue-Chao (刘学超), Huang Wei (黄维), Zhuo Shi-Yi (卓世异), Zheng Yan-Qing (郑燕青), Shi Er-Wei (施尔畏) Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC 2015 Chin. Phys. B 24 126801

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