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Chin. Phys. B, 2015, Vol. 24(11): 117304    DOI: 10.1088/1674-1056/24/11/117304

Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface

Han Chao (韩超)a, Zhang Yu-Ming (张玉明)a, Song Qing-Wen (宋庆文)a b, Tang Xiao-Yan (汤晓燕)a, Zhang Yi-Men (张义门)a, Guo Hui (郭辉)a, Wang Yue-Hu (王悦湖)a
a School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
Abstract  This paper reports the performances of Ti/Al based ohmic contacts fabricated on highly doped p-type 4H-SiC epitaxial layer which has a severe step-bunching surface. Different contact schemes are investigated based on the Al:Ti composition with no more than 50 at.% Al. The specific contact resistance (SCR) is obtained to be as low as 2.6×10-6 Ω·cm2 for the bilayered Ti(100 nm)/Al(100 nm) contact treated with 3 min rapid thermal annealing (RTA) at 1000 ℃. The microstructure analyses examined by physical and chemical characterization techniques reveal an alloy-assisted ohmic contact formation mechanism, i.e., a high degree of alloying plays a decisive role in forming the interfacial ternary Ti3SiC2 dominating the ohmic behavior of the Ti/Al based contact. Furthermore, a globally covered Ti3SiC2 layer with (0001)-oriented texture can be formed, regardless of the surface step bunching as well as its structural evolution during the metallization annealing.
Keywords:  4H-SiC      p-type      ohmic contact      alloying      step bunching  
Received:  05 May 2015      Revised:  10 July 2015      Accepted manuscript online: 
PACS:  73.40.Cg (Contact resistance, contact potential)  
  68.37.-d (Microscopy of surfaces, interfaces, and thin films)  
Fund: Project supported by the Key Specific Projects of Ministry of Education of China (Grant No. 625010101), the National Natural Science Foundation of China (Grant No. 61234006), the Natural Science Foundation of ShaanXi Province, China (Grant No. 2013JQ8012), the Doctoral Fund of Ministry of Education of China (Grant No. 20130203120017), and the Specific Project of the Core Devices, China (Grant No. 2013ZX0100100-004).
Corresponding Authors:  Zhang Yu-Ming     E-mail:

Cite this article: 

Han Chao (韩超), Zhang Yu-Ming (张玉明), Song Qing-Wen (宋庆文), Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Guo Hui (郭辉), Wang Yue-Hu (王悦湖) Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface 2015 Chin. Phys. B 24 117304

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