Please wait a minute...
Chin. Phys. B, 2023, Vol. 32(4): 048505    DOI: 10.1088/1674-1056/acbd29

Optimal impurity distribution model and experimental verification of variation of lateral doping termination

Min Ren(任敏)1,2,†, Chang-Yu Ye(叶昶宇)1, Jian-Yu Zhou(周建宇)1, Xin Zhang(张新)3, Fang Zheng(郑芳)3, Rong-Yao Ma(马荣耀)3, Ze-Hong Li(李泽宏)1,2, and Bo Zhang(张波)1,2
1 State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
2 Guangdong Institute of Electronic Information Engineering, University of Electronic Science and Technology of China, Dongguan 523808, China;
3 Wuxi China Resources Huajing Microelectronics Co. LTD, Wuxi 214061, China
Abstract  Based on the charge balance principle, an optimal impurity distribution variation of lateral doping termination (OID-VLD) and its ion-injection mask design method are proposed and verified. The comparative simulations and experiments show that OID-VLD can achieve better blocking ability and reliability than the traditional VLD (T-VLD). Vertical double diffusion MOSFET (VDMOS) with OID-VLD achieved breakdown voltage (BV) of 1684 V and passed the 168 hours 100 ℃-110 ℃-120 ℃-125 ℃ high-temperature reverse bias (HTRB) test, while VDMOS with T-VLD obtained BV of 1636 V and failed in the 20 hours 120 ℃ HTRB test.
Keywords:  variation of lateral doping (VLD)      junction termination      breakdown voltage      reliability  
Received:  16 January 2023      Revised:  12 February 2023      Accepted manuscript online:  20 February 2023
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the Key Research and Development Program of Jiangsu Province, China (Grant No. BE2020010) and the Natural Science Foundation of Guangdong Province, China (Grant No. 2023A1515012652).
Corresponding Authors:  Min Ren     E-mail:

Cite this article: 

Min Ren(任敏), Chang-Yu Ye(叶昶宇), Jian-Yu Zhou(周建宇), Xin Zhang(张新), Fang Zheng(郑芳), Rong-Yao Ma(马荣耀), Ze-Hong Li(李泽宏), and Bo Zhang(张波) Optimal impurity distribution model and experimental verification of variation of lateral doping termination 2023 Chin. Phys. B 32 048505

[1] Baliga B J 1991 IEEE Trans. Electron Dev. 38 1568
[2] Spaziani L and Lu L 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 14-17, 2018, Shanghai, China, p. 8
[3] Yuan X, Laird I and Walder S 2021 IEEE Trans. Power Electron. 36 3925
[4] Romijn J, Vollebregt S, Middelburg L M, Mansouri B E, van Zeijl H W, May A, Erlbacher T, Zhang G and Sarro P M 2022 IEEE Trans. Electron Dev. 69 4
[5] Li S, Liu Y, Yu P and Liu Z 2022 The Proceedings of the 16th Annual Conference of China Electrotechnical Society, September 24-26, 2021, Beijing, China, p. 1278
[6] Sadilek T, Huber L, Jang Y, Barbosa P and Husain I 2023 IEEE Trans. Power Electron. 38 1204
[7] Brieger K P, Gerlach W and Pelka J 1983 Solid-State Electron. 26 739
[8] Temple V A K and Tantraporn W 1986 IEEE Trans. Electron Dev. 33 1601
[9] Stengl R, Gosele U, Fellinger C, Beyer M and Walesch S 1986 IEEE Trans. Electron Dev. 33 426
[10] Sung W, Van Brunt E, Baliga B J and Huang A Q 2011 IEEE Electron Dev. Lett. 32 880
[11] Jiang H, Zhang B, Chen W, Li Z, Zheng C, Liu C, Rao Z and Dong B 2012 Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, June 3-7, 2012, Bruges, Belgium, p. 173
[12] Feng G, Suda J and Kimoto T 2012 IEEE Trans. Electron Dev. 59 414
[13] Jiang J Y, Hsu H C, Chu K W, Huang C F and Zhao F 2015 IEEE Electron Dev. Lett. 36 699
[14] Balestra L, Reggiani S, Gnudi A, Gnani E, Dobrzynska J and Vobecký J 2020 IEEE Trans. Electron Dev. 67 4645
[15] Ren M, Zhang X, Zhang X, Feng J, Yang Y, Bai Y, Fan J, Ma R, Zheng F, Ma Y, Li Z and Zhang B 2021 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), September 14-October 13, 2021, Happening Virtually, p. 1
[16] Xu X, Li Z, Zhang L, Li L, Zhou K, Li J and Zhang J 2021 Appl. Phys. A 128 16
[17] Dai T, Zhang L, Vavasour O, Renz A B, Shah V A, Antoniou M, Mawby P A and Gammon P M 2021 IEEE Trans. Electron Dev. 68 1162
[18] Lin Z, Zeng W and Wang Z 2022 IEEE J. Electron Dev. Soc. 10 313
[19] Yun N and Sung W 2022 IEEE Trans. Electron Dev. 69 3826
[20] Lutz J, Schlangenotto H, Scheuermann U and De Doncker R 2018 Semiconductor Power Devices, 2nd edn. (Cham: Springer International Publishing), pp. 492-495
[1] Integrated, reliable laser system for an 87Rb cold atom fountain clock
Zhen Zhang(张镇), Jing-Feng Xiang(项静峰), Bin Xu(徐斌), Pan Feng(冯盼), Guang-Wei Sun(孙广伟),Yi-Ming Meng(孟一鸣), Si-Min-Da Deng(邓思敏达), Wei Ren(任伟),Jin-Yin Wan(万金银), and De-Sheng Lü(吕德胜). Chin. Phys. B, 2023, 32(1): 013202.
[2] Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure
Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇). Chin. Phys. B, 2023, 32(1): 017306.
[3] High throughput N-modular redundancy for error correction design of memristive stateful logic
Xi Zhu(朱熙), Hui Xu(徐晖), Weiping Yang(杨为平), Zhiwei Li(李智炜), Haijun Liu(刘海军), Sen Liu(刘森), Yinan Wang(王义楠), and Hongchang Long(龙泓昌). Chin. Phys. B, 2023, 32(1): 018502.
[4] A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance
Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). Chin. Phys. B, 2022, 31(7): 078501.
[5] Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench
Chunzao Wang(王春早), Baoxing Duan(段宝兴), Licheng Sun(孙李诚), and Yintang Yang(杨银堂). Chin. Phys. B, 2022, 31(4): 047304.
[6] Lateral β-Ga2O3 Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics
Pei-Pei Ma(马培培), Jun Zheng(郑军), Ya-Bao Zhang(张亚宝), Xiang-Quan Liu(刘香全), Zhi Liu(刘智), Yu-Hua Zuo(左玉华), Chun-Lai Xue(薛春来), and Bu-Wen Cheng(成步文). Chin. Phys. B, 2022, 31(4): 047302.
[7] Impact of STI indium implantation on reliability of gate oxide
Xiao-Liang Chen(陈晓亮), Tian Chen(陈天), Wei-Feng Sun(孙伟锋), Zhong-Jian Qian(钱忠健), Yu-Dai Li(李玉岱), and Xing-Cheng Jin(金兴成). Chin. Phys. B, 2022, 31(2): 028505.
[8] Modeling of high permittivity insulator structure with interface charge by charge compensation
Zhi-Gang Wang(汪志刚), Yun-Feng Gong(龚云峰), and Zhuang Liu(刘壮). Chin. Phys. B, 2022, 31(2): 028501.
[9] Terminal-optimized 700-V LDMOS with improved breakdown voltage and ESD robustness
Jie Xu(许杰), Nai-Long He(何乃龙), Hai-Lian Liang(梁海莲), Sen Zhang(张森), Yu-De Jiang(姜玉德), and Xiao-Feng Gu(顾晓峰). Chin. Phys. B, 2021, 30(6): 067303.
[10] Design and simulation of AlN-based vertical Schottky barrier diodes
Chun-Xu Su(苏春旭), Wei Wen(温暐), Wu-Xiong Fei(费武雄), Wei Mao(毛维), Jia-Jie Chen(陈佳杰), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃). Chin. Phys. B, 2021, 30(6): 067305.
[11] Degradation of β-Ga2O3 Schottky barrier diode under swift heavy ion irradiation
Wen-Si Ai(艾文思), Jie Liu(刘杰), Qian Feng(冯倩), Peng-Fei Zhai(翟鹏飞), Pei-Pei Hu(胡培培), Jian Zeng(曾健), Sheng-Xia Zhang(张胜霞), Zong-Zhen Li(李宗臻), Li Liu(刘丽), Xiao-Yu Yan(闫晓宇), and You-Mei Sun(孙友梅). Chin. Phys. B, 2021, 30(5): 056110.
[12] A super-junction SOI-LDMOS with low resistance electron channel
Wei-Zhong Chen(陈伟中), Yuan-Xi Huang(黄元熙), Yao Huang(黄垚), Yi Huang(黄义), and Zheng-Sheng Han(韩郑生). Chin. Phys. B, 2021, 30(5): 057303.
[13] Improved 4H-SiC UMOSFET with super-junction shield region
Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), Cheng-Hao Yu(于成浩), and Fei Cao(曹菲). Chin. Phys. B, 2021, 30(5): 058502.
[14] Resistive switching memory for high density storage and computing
Xiao-Xin Xu(许晓欣), Qing Luo(罗庆), Tian-Cheng Gong(龚天成), Hang-Bing Lv(吕杭炳), Qi Liu(刘琦), and Ming Liu(刘明). Chin. Phys. B, 2021, 30(5): 058702.
[15] Novel Si/SiC heterojunction lateral double-diffused metal-oxide semiconductor field-effect transistor with p-type buried layer breaking silicon limit
Baoxing Duan(段宝兴), Xin Huang(黄鑫), Haitao Song (宋海涛), Yandong Wang(王彦东), and Yintang Yang(杨银堂). Chin. Phys. B, 2021, 30(4): 048503.
No Suggested Reading articles found!