Optimal impurity distribution model and experimental verification of variation of lateral doping termination
Min Ren(任敏)1,2,†, Chang-Yu Ye(叶昶宇)1, Jian-Yu Zhou(周建宇)1, Xin Zhang(张新)3, Fang Zheng(郑芳)3, Rong-Yao Ma(马荣耀)3, Ze-Hong Li(李泽宏)1,2, and Bo Zhang(张波)1,2
1 State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; 2 Guangdong Institute of Electronic Information Engineering, University of Electronic Science and Technology of China, Dongguan 523808, China; 3 Wuxi China Resources Huajing Microelectronics Co. LTD, Wuxi 214061, China
Abstract Based on the charge balance principle, an optimal impurity distribution variation of lateral doping termination (OID-VLD) and its ion-injection mask design method are proposed and verified. The comparative simulations and experiments show that OID-VLD can achieve better blocking ability and reliability than the traditional VLD (T-VLD). Vertical double diffusion MOSFET (VDMOS) with OID-VLD achieved breakdown voltage (BV) of 1684 V and passed the 168 hours 100 ℃-110 ℃-120 ℃-125 ℃ high-temperature reverse bias (HTRB) test, while VDMOS with T-VLD obtained BV of 1636 V and failed in the 20 hours 120 ℃ HTRB test.
Fund: Project supported by the Key Research and Development Program of Jiangsu Province, China (Grant No. BE2020010) and the Natural Science Foundation of Guangdong Province, China (Grant No. 2023A1515012652).
Corresponding Authors:
Min Ren
E-mail: renmin@uestc.edu.cn
Cite this article:
Min Ren(任敏), Chang-Yu Ye(叶昶宇), Jian-Yu Zhou(周建宇), Xin Zhang(张新), Fang Zheng(郑芳), Rong-Yao Ma(马荣耀), Ze-Hong Li(李泽宏), and Bo Zhang(张波) Optimal impurity distribution model and experimental verification of variation of lateral doping termination 2023 Chin. Phys. B 32 048505
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