GeSn (0.524 eV) single-junction thermophotovoltaic cells based on the device transport model
Xin-Miao Zhu(朱鑫淼)1, Min Cui(崔敏)1,†, Yu Wang(汪宇)2, Tian-Jing Yu(于添景)1, Jin-Xiang Deng(邓金祥)1, and Hong-Li Gao(高红丽)1
1 Faculty of Science, Beijing University of Technology, Beijing 100124, China; 2 Department of Physics, Faculty of Science, Kunming University of Science and Technology, Kunming 650500, China
Abstract Based on the transport equation of the semiconductor device model for 0.524 eV GeSn alloy and the experimental parameters of the material, the thermal-electricity conversion performance governed by a GeSn diode has been systematically studied in its normal and inverted structures. For the normal p+/n (n+/p) structure, it is demonstrated here that an optimal base doping Nd(a) = 3 (7)×1018 cm-3 is observed, and the superior p+/n structure can achieve a higher performance. To reduce material consumption, an economical active layer can comprise a 100 nm-300 nm emitter and a 3 μm-6 μm base to attain comparable performance to that for the optimal configuration. Our results offer many useful guidelines for the fabrication of economical GeSn thermophotovoltaic devices.
Fund: Project supported by the Beijing Natural Science Foundation Program,China (Grant No.4192016).
Corresponding Authors:
Min Cui,E-mail:mcui@bjut.edu.cn
E-mail: mcui@bjut.edu.cn
About author: 2021-12-31
Cite this article:
Xin-Miao Zhu(朱鑫淼), Min Cui(崔敏), Yu Wang(汪宇), Tian-Jing Yu(于添景),Jin-Xiang Deng(邓金祥), and Hong-Li Gao(高红丽) GeSn (0.524 eV) single-junction thermophotovoltaic cells based on the device transport model 2022 Chin. Phys. B 31 058801
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