| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Influence of annealing treatment on the luminescent properties of Ta:β-Ga2O3 single crystal |
| Xiaowei Yu(余小威)1, Huiayuan Cui(崔慧源)2, Maodong Zhu(朱茂东)2, Zhilin Xia(夏志林)1, Qinglin Sai(赛青林)2 |
1 School of Material Science and Engineering, Wuhan University of Technology, Wuhan 430070, China;
2 Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China |
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Abstract Ta5+ doped β-Ga2O3 single crystals were grown by using the optical floating zone method, and then annealed in the air and nitrogen gas at 1400℃ for 20 hours. The transmittance spectra, photoluminescence (PL), x-ray irradiation spectra, and PL decay profiles of the samples were measured at room temperature. The relevant results show that the optical transmittance of the samples annealed in the air or nitrogen gas was improved. By drawing the (ahv)2-hv graph, it can be seen that the band gap decreased after being annealed in the air, but increased in nitrogen gas. The PL spectra and x-ray irradiation spectra show that the luminescent intensity of the sample annealed in the air increased substantially, while decreased for the sample annealed in nitrogen. The PL decay time of the Ta:β-Ga2O3 annealed in the air increased significantly compared with that of the Ta:β-Ga2O3 sample without annealing, but the tendency after annealing in nitrogen gas was opposite.
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Received: 28 March 2019
Revised: 07 May 2019
Accepted manuscript online:
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PACS:
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78.40.Fy
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(Semiconductors)
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78.55.-m
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(Photoluminescence, properties and materials)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51802327) and the Science and Technology Commission of Shanghai Municipality, China (Grant No. 18511110500). |
Corresponding Authors:
Zhilin Xia, Qinglin Sai
E-mail: xiazhilin@whut.edu.cn;saiql@siom.ac.cn
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Cite this article:
Xiaowei Yu(余小威), Huiayuan Cui(崔慧源), Maodong Zhu(朱茂东), Zhilin Xia(夏志林), Qinglin Sai(赛青林) Influence of annealing treatment on the luminescent properties of Ta:β-Ga2O3 single crystal 2019 Chin. Phys. B 28 077801
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