1 Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China;
2 College of Physics, Chongqing University, Chongqing 401331, China;
3 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
To enhance the thermoelectric performance of Cu2GeSe3, a series of Te-alloyed samples Cu2Ge(Se1-xTex)3 are synthesized and investigated in this work. It is found that the lattice thermal conductivity is reduced drastically for x=0.1 sample, which may be attributed to the point defects introduced by alloying. However, for samples with x ≥ 0.2, the lattice thermal conductivity increases with increasing x, which is related to a less distorted structure. The structure evolution, together with the change in carrier concentration, also leads to a systemically change in electrical properties. Finally, a zT of 0.55@750 K is obtained for the sample with x=0.3, about 62% higher than that for the pristine sample.
Project supported by the National Natural Science Foundation of China (Grant Nos.51672270,11674040,and 11404044),the Key Research Program of Frontier Sciences,Chinese Academy of Sciences (Grant No.QYZDB-SSW-SLH016),and the Project for Fundamental and Frontier Research in Chongqing City (Grant No.CSTC2015JCYJBX0026).
Corresponding Authors:
Guoyu Wang
E-mail: guoyuw@cigit.ac.cn
Cite this article:
Ruifeng Wang(王瑞峰), Lu Dai(戴璐), Yanci Yan(闫艳慈), Kunling Peng(彭坤岭), Xu Lu(卢旭), Xiaoyuan Zhou(周小元), Guoyu Wang(王国玉) Complex alloying effect on thermoelectric transport properties of Cu2Ge(Se1-xTex)3 2018 Chin. Phys. B 27 067201
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