CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
High holding voltage SCR for robust electrostatic discharge protection |
Zhao Qi(齐钊), Ming Qiao(乔明), Yitao He(何逸涛), Bo Zhang(张波) |
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
|
|
Abstract A novel silicon controlled rectifier (SCR) with high holding voltage (Vh) for electrostatic discharge (ESD) protection is proposed and investigated in this paper. The proposed SCR obtains high Vh by adding a long N+ layer (LN+) and a long P+ layer (LP+), which divide the conventional low voltage trigger silicon controlled rectifier (LVTSCR) into two SCRs (SCR1:P+/Nwell/Pwell/N+ and SCR2:P+/LN+/LP+/N+) with a shared emitter. Under the low ESD current (IESD), the two SCRs are turned on at the same time to induce the first snapback with high Vh (Vh1). As the IESD increases, the SCR2 will be turned off because of its low current gain. Therefore, the IESD will flow through the longer SCR1 path, bypassing SCR2, which induces the second snapback with high Vh (Vh2). The anti-latch-up ability of the proposed SCR for ESD protection is proved by a dynamic TLP-like (Transmission Line Pulse-like) simulation. An optimized Vh2 of 7.4 V with a maximum failure current (It2) of 14.7 mA/μ m is obtained by the simulation.
|
Received: 15 February 2017
Revised: 27 March 2017
Accepted manuscript online:
|
PACS:
|
73.40.Qv
|
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
|
|
85.30.De
|
(Semiconductor-device characterization, design, and modeling)
|
|
85.30.Mn
|
(Junction breakdown and tunneling devices (including resonance tunneling devices))
|
|
85.30.Rs
|
(Thyristors)
|
|
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos.61376080 and 61674027) and the Natural Science Foundation of Guangdong Province,China (Grant Nos.2014A030313736 and 2016A030311022). |
Corresponding Authors:
Ming Qiao
E-mail: qiaoming@uestc.edu.cn
|
Cite this article:
Zhao Qi(齐钊), Ming Qiao(乔明), Yitao He(何逸涛), Bo Zhang(张波) High holding voltage SCR for robust electrostatic discharge protection 2017 Chin. Phys. B 26 077304
|
[1] |
Ker M D and Hsu K C 2005 IEEE Trans. Dev. Mater. Rel. 5 235
|
[2] |
Huang Y C and Ker M D 2013 IEEE Electron Dev. Lett. 34 674
|
[3] |
Liu Z, Liou J J and Vinson J 2008 IEEE Electron Dev. Lett. 29 753
|
[4] |
Tseng J C, Hsu C T, Tsai C K, Liao Y C and Ker M D 2010 IEEE IPFA, July 5–9, 2010, Singapore, p. 1
|
[5] |
Huang Y J and Ker M D 2013 IEEE Electron Device Lett. 34 674
|
[6] |
Ma F, Zhang B, Han Y, Zheng J, Song B, Dong S and Liang H 2013 IEEE Electron Device Lett. 34 1178
|
[7] |
Fan H, Jiang L and Zhang B 2013 IEEE Trans. Device Mater. Rel. 13 50
|
[8] |
Ma J R, Ming Q and Zhang B 2015 Chin. Phys. B 24 047303
|
[9] |
Zhang S, Dong S, Wu X, Zeng J, Zhong L and Wu J 2015 Chin. Phys. B 24 108502
|
[10] |
Zeng J, Dong S, Liou J J, Han Y, Zhong L and Wang W 2015 IEEE Electron Devices 62 606
|
[11] |
Dai C and Ker M 2016 IEEE Trans. Electron Dev. 63 1996
|
[12] |
Wang Z, Klebanov M, Cooper R B, Liang W, Courtney S and Liou J J 2016 IEEE Electron Device Lett. 36 1121
|
[13] |
Du F, Liu J, Liu Z, Qian L and Chen C 2016 IEEE INEC., May 9–11, 2016, Chengdu, China, p. 1
|
[14] |
Huang X, Liou J J, Liu Z, Liu F, Liu J and Cheng H 2016 IEEE Electron Device Lett. 37 1311
|
[15] |
Huang Y and Ker M D 2016 IEEE Electron Devices 63 3193
|
[16] |
Lai D, Zhao S, Gao J and Smedes T 2016 Proc. EOS/ESD., Sept., 11–16, 2016, Anaheim, CA, USA, p. 1
|
[17] |
Ker M, Chiu P, Shieh W and Wang C 2017 IEEE Electron Devices 64 642
|
[18] |
Chung Y, Xu H, Ida R and Baird B 2006 IEEE Proc. IRPS., March 26–30, 2006, San Jose, CA, USA, p. 352
|
[19] |
Wolf H, Gieser H and Wilkening W 1999 Proc. EOS/ESD., Sept., 28–30, 1999, Anaheim, CA, USA, p. 28
|
[20] |
Salamero C, Nolhier N, Gendron A, Bafleur M, Besse P and Zecri M 2006 IEEE Trans. Device Mater. Rel. 6 399
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|