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Chin. Phys. B, 2017, Vol. 26(7): 074211    DOI: 10.1088/1674-1056/26/7/074211
ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS Prev   Next  

Design and performance of a composite Tm: YAG laser pumped by VBG-stabilized narrow-band laser diode

Shu-Tao Dai(戴殊韬)1,2, Jian-Hong Huang(黄见洪)1, Hai-Zhou Huang(黄海舟)1,2, Li-Xia Wu(吴丽霞)1, Jin-Hui Li(李锦辉)1, Jing Deng(邓晶)1, Yan Ge(葛燕)1, Wen-Xiong Lin(林文雄)1
1 Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China
Abstract  A 2-μm composite Tm:YAG laser pumped with a narrow-band laser diode was presented. The temperature distribution and thermal lens in the Tm:YAG were numerically simulated by a finite element method and the results were used to design the special cavity, in order to achieve a high efficiency and stable output. With a 25-W incident pump power, we obtained a maximum output power of 11 W at 2018.5 nm, corresponding to a slope efficiency of 51.3% and an optical-to-optical efficiency of 44.5%, respectively. The beam quality was measured to be Mx2=1.8 and My2=1.6.
Keywords:  Tm:YAG      2μm laser      thermal effects      diode-pumped  
Received:  16 February 2017      Revised:  18 March 2017      Accepted manuscript online: 
PACS:  42.55.Xi (Diode-pumped lasers)  
  42.72.Ai (Infrared sources)  
  42.60.Da (Resonators, cavities, amplifiers, arrays, and rings)  
  42.60.By (Design of specific laser systems)  
Fund: Project supported by the Science and Technology Major Project of Fujian Province,China (Grant No.2013HZ0003-2).
Corresponding Authors:  Wen-Xiong Lin     E-mail:  wxlin@fjirsm.ac.cn

Cite this article: 

Shu-Tao Dai(戴殊韬), Jian-Hong Huang(黄见洪), Hai-Zhou Huang(黄海舟), Li-Xia Wu(吴丽霞), Jin-Hui Li(李锦辉), Jing Deng(邓晶), Yan Ge(葛燕), Wen-Xiong Lin(林文雄) Design and performance of a composite Tm: YAG laser pumped by VBG-stabilized narrow-band laser diode 2017 Chin. Phys. B 26 074211

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