Compact, temperature-stable multi-gigahertz passively modelocked semiconductor disk laser

doi:10.1088/1674-1056/24/8/084208

Abstract We present a compact passively mode-locked semiconductor disk laser at 1045 nm. The gain chip without any post processing consists of 16 compressively strained InGaAs symmetrical step quantum wells in the active region. 3-GHz repetition rate, 4.9-ps pulse duration, and 30-mW average output power are obtained with 1.4 W of 808-nm incident pump power. The temperature stability of the laser is demonstrated to have an ideal shift rate of 0.035 nm/K of the lasing wavelength.

Keywords: mode-locked lasers thermal effects diode-pumped

Received: 07 January 2015
Revised: 29 January 2015
Accepted manuscript online:

PACS:	42.60.Fc	(Modulation, tuning, and mode locking)
	68.60.Dv	(Thermal stability; thermal effects)
	42.55.Xi	(Diode-pumped lasers)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61177047) and the Key Project of the National Natural Science Foundation of China (Grant No. 61235010).

Corresponding Authors: Song Yan-Rong
E-mail: yrsong@bjut.edu.cn

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Song Yan-Rong (宋晏蓉), Guoyu He-Yang (郭于鹤洋), Zhang Peng (张鹏), Tian Jin-Rong (田金荣) Compact, temperature-stable multi-gigahertz passively modelocked semiconductor disk laser 2015 Chin. Phys. B 24 084208

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Compact, temperature-stable multi-gigahertz passively modelocked semiconductor disk laser

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