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Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si |
Chao He(何超), Zhi Liu(刘智), Bu-Wen Cheng(成步文) |
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract We report a lateral Ge-on-Si ridge waveguide light emitting diode (LED) grown by ultrahigh vacuum chemical vapor deposition (UHV-CVD). Direct-bandgap electroluminescence (EL) of Ge waveguide under continuous current is observed at room temperature. The heat-enhancing luminescence and thermal radiation-induced superlinear increase of edge output optical power are found. The spontaneous emission and thermal radiation based on the generalized Planck radiation law are calculated and fit very well to the experimental results. The Ge waveguides with different lengths are studied and the shorter one shows stronger EL intensity.
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Received: 15 June 2016
Revised: 21 August 2016
Accepted manuscript online:
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PACS:
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61.72.uf
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(Ge and Si)
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42.79.Gn
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(Optical waveguides and couplers)
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78.60.Fi
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(Electroluminescence)
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44.40.+a
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(Thermal radiation)
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Fund: Project supported by the National Basic Research Program of China (Grant No. 2013CB632103), the National Natural Science Foundation of China (Grant Nos. 61176013 and 61036003), and the Science Fund from Beijing Science and Technology Commission, China (Grant No. Z151100003315019). |
Corresponding Authors:
Bu-Wen Cheng
E-mail: cbw@semi.ac.cn
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Cite this article:
Chao He(何超), Zhi Liu(刘智), Bu-Wen Cheng(成步文) Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si 2016 Chin. Phys. B 25 126104
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