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Chin. Phys. B, 2016, Vol. 25(2): 028401    DOI: 10.1088/1674-1056/25/2/028401
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Investigations of the optical properties of Si surface with microwires for solar cell applications

Li Li(郦莉)1, Shi-Liang Wu(吴仕良)1, Dong Yu(虞栋)1, Wei Wang(王伟)1, Wen-Chao Liu(刘文超)2, Xiao-Shan Wu(吴小山)1, Feng-Ming Zhang(张凤鸣)1
1. Collaborative Innovation Center of Advanced Microstrucutres, Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China;
2. National Laboratory of Solid State Microstructures, Center of Photovoltaic Engineering and School of Modern Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
Abstract  Combined with the rough textures which are usually used for fabricating the planar solar cells, textured-microwire (MW) structures (there are MW textures on the tops of MWs) are fabricated. Both simulative and experimental investigations of the optical properties of Si surface with microwires are carried out and the results show that surfaces of textured-MW structures exhibit lower reflectance in the short wavelength range, but higher reflectance in the long wavelength range than the conventional textured surface. It is also shown, consequently, that the textured-MW structures could absorb more photons in the short wavelength range, which could help improve the performance of the solar cells.
Keywords:  microstructure      reflectivity      silicon      solar energy  
Received:  25 June 2015      Revised:  22 October 2015      Accepted manuscript online: 
PACS:  84.60.Jt (Photoelectric conversion)  
  81.65.Cf (Surface cleaning, etching, patterning)  
  78.67.-n (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. U1332205, 11274153, 11204124, and 11404091).
Corresponding Authors:  Feng-Ming Zhang     E-mail:  fmzhang@nju.edu.cn

Cite this article: 

Li Li(郦莉), Shi-Liang Wu(吴仕良), Dong Yu(虞栋), Wei Wang(王伟), Wen-Chao Liu(刘文超), Xiao-Shan Wu(吴小山), Feng-Ming Zhang(张凤鸣) Investigations of the optical properties of Si surface with microwires for solar cell applications 2016 Chin. Phys. B 25 028401

[1] Stirn R and Yeh Y M 1975 Appl. Phys. Lett. 27 95
[2] Zhao J and Green M A 1991 IEEE Trans. Electron Dev. 38 1925
[3] Chhajed S, Schubert M F, Kim J K and Fred Schubert E 2008 Appl. Phys. Lett. 93 251108
[4] Chen J and Sun K 2010 Sol. Energy Mater. Sol. Cells 94 629
[5] Oh J, Yuan H C and Branz H M 2012 Nat. Nanotechnol. 7 743
[6] Chen L, Wang Q K, Wangyang P H, Huang K and Shen X Q 2015 Chin. Phys. B 24 040202
[7] Xiang C P, Jin Y, Liu J T, Xu B Z, Wang W M, Wei X, Song G F and Xu Y 2014 Chin. Phys. B 23 038803
[8] Chen F X, Wang L S and Xu W Y 2013 Chin. Phys. B 22 045202
[9] Yablonovitch E 1982 J. Opt. Soc. Am. 72 899
[10] Campbell P and Green M A 1987 J. Appl. Phys. 62 243
[11] Yuan H C, Yost V E, Page M R, Stradins P, Meier D L and Branz H M 2009 Appl. Phys. Lett. 95 123501
[12] Stubenrauch M, Fischer M, Kremin C, Stoebenau S, Albrecht A and Nagel O 2006 J. Micromech. Microeng. 16 S82
[13] Koynov S, Brandt M S and Stutzmann M 2006 Appl. Phys. Lett. 88 203107
[14] Li J, Yu H, Wong S M, Zhang G, Lo G Q and Kwong D L 2010 J. Phys. D: Appl. Phys. 43 255101
[15] Jung J Y, Guo Z, Jee S W, Um H D, Park K T, Hyun M S, Yang J M and Lee J H 2010 Nanotechnology 21 445303
[16] Garnett E and Yang P 2008 J. Am. Chem. Soc. 130 9224
[17] Tsakalakos L, Balch J, Fronheiser J, Korevaar B, Sulima O and Rand J 2007 Appl. Phys. Lett. 91 233117
[18] Tian B, Zheng X, Kempa T J, Fang Y, Yu N, Yu G, Huang J and Lieber C M 2007 Nature 449 885
[19] Peng K Q and Lee S T 2011 Adv. Mater. 23 198
[20] Putnam M C, Boettcher S W, Kelzenberg M D, Turner-Evans D B, Spurgeon J M, Warren E L, Briggs R M, Lewis N S and Atwater H A 2010 Energy. Environ. Sci. 3 1037
[21] Gharghi M, Fathi E, Kante B, Sivoththaman S and Zhang X 2012 Nano Lett. 12 6278
[22] Kim D R, Lee C H, Rao P M, Cho I S and Zheng X 2011 Nano Lett. 11 2704
[23] Yang L, Xuan Y, Han Y and Tan J 2012 Energ. Convers. Manag. 54 30
[24] Garnett E and Yang P 2010 Nano Lett. 10 1082
[25] Zhu J, Yu Z F, Burkhard G F, Hsu C M, Connor S T, Xu Y Q, Wang Q, McGehee M, Fan S H and Cui Y 2008 Nano Lett. 9 279
[26] Kosten E D, Warren E L and Atwater H A 2011 Opt. Express 19 3316
[27] Lee E, Kim Y, Gwon M, Kim D W, Baek S H and Kim J H 2012 Sol. Energy Mater. Sol. Cells 103 93
[28] Hu L and Chen G 2007 Nano Lett. 7 3249
[29] Jung J Y, Um H D, Jee S W, Park K T, Bang J H and Lee J H 2013 Sol. Energy Mater. Sol. Cells 112 84
[30] Kelzenberg M, Putnam M, Turner-Evans D, Lewis N and Atwater H 2009 in 34th IEEE Photovoltaic Specialists Conference (PVSC), 001948
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