| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Spin-valley quantum Hall phases in graphene |
| Tian Hong-Yu (田宏玉) |
| Department of Physics, Yancheng Institute of Technology, Yancheng 224051, China |
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Abstract We theoretically investigate possible quantum Hall phases and corresponding edge states in graphene by taking a strong magnetic field, Zeeman splitting M, and sublattice potential Δ into account but without spin-orbit interaction. It was found that for the undoped graphene either a quantum valley Hall phase or a quantum spin Hall phase emerges in the system, depending on relative magnitudes of M and Δ . When the Fermi energy deviates from the Dirac point, the quantum spin-valley Hall phase appears and its characteristic edge state is contributed only by one spin and one valley species. The metallic boundary states bridging different quantum Hall phases possess a half-integer quantized conductance, like e2/2h or 3e2/2h. The possibility of tuning different quantum Hall states with M and Δ suggests possible graphene-based spintronics and valleytronics applications.
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Received: 26 June 2015
Revised: 06 August 2015
Accepted manuscript online:
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PACS:
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73.20.At
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(Surface states, band structure, electron density of states)
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72.25.Dc
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(Spin polarized transport in semiconductors)
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73.22.Pr
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(Electronic structure of graphene)
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73.43.Nq
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(Quantum phase transitions)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11447218, 11274059, 11404278, and 11447216). |
Corresponding Authors:
Tian Hong-Yu
E-mail: tianhy2010@163.com
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Cite this article:
Tian Hong-Yu (田宏玉) Spin-valley quantum Hall phases in graphene 2015 Chin. Phys. B 24 127301
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