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Chin. Phys. B, 2015, Vol. 24(10): 107701    DOI: 10.1088/1674-1056/24/10/107701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

The interface density dependence of the electrical properties of 0.9Pb(Sc0.5Ta0.5)O3-0.1PbTiO3/0.55Pb(Sc0.5Ta0.5)O3-0.45PbTiO3 multilayer thin films

Li Xue-Dong (李雪冬)a b, Liu Hong (刘洪)b, Wu Jia-Gang (吴家刚)b, Liu Gang (刘刚)a, Xiao Ding-Quan (肖定全)b, Zhu Jian-Guo (朱建国)b
a College of Physics and Electric Engineering, Mianyang Normal University, Mianyang 621000, China;
b College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
Abstract  The 0.9Pb(Sc0.5Ta0.5)O3-0.1PbTiO3/0.55Pb(Sc0.5Ta0.5)O3 -0.45PbTiO3 multilayer thin films ((PSTT10/45)n, n=1-6, 10) are deposited on SiO2/Si(100) substrates by radio frequency magnetron sputtering technique with LaNiO3 buffer and electrode layer, and the films are subsequently annealed by a two-step rapid thermal approach. It is found that the interfacial density of the film has an important influence on the electric property of the film. The electric property of the film increases and reaches its critical point with the increase of interface density, and then decreases with the further increase of the interface density. With an interfacial density of 16 m-1, the film shows an optimized dielectric property (high dielectric constant, εr=765, lowest dielectric loss, tanδ =0.041, at 1 kHz) and ferroelectric property (highest remnant polarization, 2Pr=36.9 C/cm2, low coercive field, 2Ec=71.9 kV/cm). The possible reason for the electric behavior of the film is the competition of the interface stress with the interface defect.
Keywords:  ferroelectric multilayer thin films      electrical properties      interface density  
Received:  26 January 2015      Revised:  07 April 2015      Accepted manuscript online: 
PACS:  77.55.fp (Other ferroelectric films)  
  77.22.-d (Dielectric properties of solids and liquids)  
  77.80.bn (Strain and interface effects)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60771016) and the Scientific Research Foundation of Mianyang Normal University, China (Grant No. QD2013A07).
Corresponding Authors:  Zhu Jian-Guo     E-mail:  nic0400@scu.edu.cn

Cite this article: 

Li Xue-Dong (李雪冬), Liu Hong (刘洪), Wu Jia-Gang (吴家刚), Liu Gang (刘刚), Xiao Ding-Quan (肖定全), Zhu Jian-Guo (朱建国) The interface density dependence of the electrical properties of 0.9Pb(Sc0.5Ta0.5)O3-0.1PbTiO3/0.55Pb(Sc0.5Ta0.5)O3-0.45PbTiO3 multilayer thin films 2015 Chin. Phys. B 24 107701

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