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Chin. Phys. B, 2015, Vol. 24(8): 088105    DOI: 10.1088/1674-1056/24/8/088105
Special Issue: TOPICAL REVIEW — Silicene
TOPICAL REVIEW—Silicene Prev   Next  

Silicene transistors–A review

Quhe Ru-Ge (屈贺如歌)a c d, Wang Yang-Yang (王洋洋)a e, Lü Jin (吕劲)a b
a State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China;
b Collaborative Innovation Center of Quantum Matter, Beijing 100871, China;
c State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
d School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
e Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Abstract  

Free standing silicene is a two-dimensional silicon monolayer with a buckled honeycomb lattice and a Dirac band structure. Ever since its first successful synthesis in the laboratory, silicene has been considered as an option for post-silicon electronics, as an alternative to graphene and other two-dimensional materials. Despite its theoretical high carrier mobility, the zero band gap characteristic makes pure silicene impossible to use directly as a field effect transistor (FET) operating at room temperature. Here, we first review the theoretical approaches to open a band gap in silicene without diminishing its excellent electronic properties and the corresponding simulations of silicene transistors based on an opened band gap. An all-metallic silicene FET without an opened band gap is also introduced. The two chief obstacles for realization of a silicene transistor are silicene's strong interaction with a metal template and its instability in air. In the final part, we briefly describe a recent experimental advance in fabrication of a proof-of-concept silicene device with Dirac ambipolar charge transport resembling a graphene FET, fabricated via a growth-transfer technique.

Keywords:  silicene      two-dimensional materials      transistor      electronic device  
Received:  18 March 2015      Revised:  26 April 2015      Accepted manuscript online: 
PACS:  81.07.-b (Nanoscale materials and structures: fabrication and characterization)  
  72.80.Vp (Electronic transport in graphene)  
  61.46.-w (Structure of nanoscale materials)  
Fund: 

Project supported by the National Natural Science Foundation of China (Grant Nos. 11274016, 11474012, and 1207141) and the National Basic Research Program of China (Grant Nos. 2013CB932604 and 2012CB619304).

Corresponding Authors:  Lü Jin     E-mail:  jinglu@pku.edu.cn

Cite this article: 

Quhe Ru-Ge (屈贺如歌), Wang Yang-Yang (王洋洋), Lü Jin (吕劲) Silicene transistors–A review 2015 Chin. Phys. B 24 088105

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