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Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection |
| Zhao Yu-Kun (赵宇坤)a b, Li Yu-Feng (李虞锋)a b, Huang Ya-Ping (黄亚平)a b, Wang Hong (王宏)a b, Su Xi-Lin (苏喜林)c, Ding Wen (丁文)a b, Yun Feng (云峰)a b c |
a Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi'an Jiaotong University, Xi'an 710049, China;
b Solid-State Lighting Engineering Research Center, Xi'an Jiaotong University, Xi'an 710049, China;
c Shaanxi Supernova Lighting Technology Co. Ltd, Xi'an 710075, China |
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Abstract Gallium nitride (GaN) based light-emitting diodes (LEDs) with chirped multiple quantum well (MQW) structures have been investigated experimentally and numerically in this paper. Compared to conventional LEDs with uniform quantum wells (QWs), LEDs with chirped MQW structures have better internal quantum efficiency (IQE) and carrier injection efficiency. The droop ratios of LEDs with chirped MQW structures show a remarkable improvement at 600 mA/mm2, reduced down from 28.6% (conventional uniform LEDs) to 23.7% (chirped MQWs-a) and 18.6% (chirped MQWs-b), respectively. Meanwhile, the peak IQE increases from 76.9% (uniform LEDs) to 83.7% (chirped MQWs-a) and 88.6% (chirped MQWs-b). The reservoir effect of chirped MQW structures is the significant reason as it could increase hole injection efficiency and radiative recombination. The leakage current and Auger recombination of chirped MQW structures can also be suppressed. Furthermore, the chirped MQWs-b structure with lower potential barriers can enhance the reservoir effect and obtain further improvement of the carrier injection efficiency and radiative recombination, as well as further suppressing efficiency droop.
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Received: 26 October 2014
Revised: 23 December 2014
Accepted manuscript online:
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PACS:
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68.65.Fg
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(Quantum wells)
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85.60.Jb
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(Light-emitting devices)
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78.55.Cr
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(III-V semiconductors)
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87.15.A-
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(Theory, modeling, and computer simulation)
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| Fund: Project supported by the National High Technology Research and Development Program of China (Grant No. 2014AA032608), the Key Laboratory for Mechanical Behavior of Material of Xi'an Jiaotong University, China (Grant No. 20121201), and the Fundamental Research Funds for the Central Universities, China. |
Corresponding Authors:
Yun Feng
E-mail: fyun2010@mail.xjtu.edu.cn
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| About author: 68.65.Fg; 85.60.Jb; 78.55.Cr; 87.15.A- |
Cite this article:
Zhao Yu-Kun (赵宇坤), Li Yu-Feng (李虞锋), Huang Ya-Ping (黄亚平), Wang Hong (王宏), Su Xi-Lin (苏喜林), Ding Wen (丁文), Yun Feng (云峰) Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection 2015 Chin. Phys. B 24 056806
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