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Chin. Phys. B, 2015, Vol. 24(2): 027901    DOI: 10.1088/1674-1056/24/2/027901
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Temperature effect on the electronic structure of Nb:SrTiO3 (100) surface

Zhang Shuang-Hong (张双红)a b, Wang Jia-Ou (王嘉鸥)b, Qian Hai-Jie (钱海杰)b, Wu Rui (吴蕊)b, Zhang Nian (张念)b, Lei Tao (雷涛)b, Liu Chen (刘晨)b, Kurash Ibrahim (奎热西·伊布拉欣)b
a School of Physics and Materials Science, Anhui University, Hefei 230039, China;
b Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
Abstract  The effect of temperature on the electronic structure of Nb-doped SrTiO3 (100) surface is investigated by high-resolution synchrotron radiation photoemission spectroscopy. According to the x-ray photoemission spectroscopy (XPS) results, at an annealing temperature of less than 700 ℃, the adsorbed carbon and hydroxyl on the STO surface could be removed, to expose the fresh intrinsic surface with a constant ratio of Ti/O. It is obvious that the STO would be doped by Ca+ impurities of bulks and O vacancies in the surface after annealing at 920 ℃ for one hour.
Keywords:  strontium titanate      ultrahigh vacuum annealing      synchrotron radiation photoemission spectroscopy  
Received:  09 June 2014      Revised:  30 September 2014      Accepted manuscript online: 
PACS:  79.60.-i (Photoemission and photoelectron spectra)  
  73.20.At (Surface states, band structure, electron density of states)  
  81.65.Cf (Surface cleaning, etching, patterning)  
Fund: Project supported by the Funds from the Chinese Academy of Sciences (Grant No. 1G2009312311750101) and the National Natural Science Foundation of China (Grant No. 11375228).
Corresponding Authors:  Wang Jia-Ou     E-mail:  wangjo@ihep.ac.cn

Cite this article: 

Zhang Shuang-Hong (张双红), Wang Jia-Ou (王嘉鸥), Qian Hai-Jie (钱海杰), Wu Rui (吴蕊), Zhang Nian (张念), Lei Tao (雷涛), Liu Chen (刘晨), Kurash Ibrahim (奎热西·伊布拉欣) Temperature effect on the electronic structure of Nb:SrTiO3 (100) surface 2015 Chin. Phys. B 24 027901

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