| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Reverse blocking characteristics and mechanisms in Schottky-drainAlGaN/GaN HEMT with a drain field plate and floating field plates |
| Wei Mao(毛维)1, Wei-Bo She(佘伟波)1, Cui Yang(杨翠)2, Jin-Feng Zhang(张金风)1, Xue-Feng Zheng(郑雪峰)1, Chong Wang(王冲)1, Yue Hao(郝跃)1 |
1. Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2. School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China |
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Abstract In this paper, a novel AlGaN/GaN HEMT with a Schottky drain and a compound field plate (SD-CFP HEMT) is presented for the purpose of better reverse blocking capability. The compound field plate (CFP) consists of a drain field plate (DFP) and several floating field plates (FFPs). The physical mechanisms of the CFP to improve the reverse breakdown voltage and to modulate the distributions of channel electric field and potential are investigated by two-dimensional numerical simulations with Silvaco-ATLAS. Compared with the HEMT with a Schottky drain (SD HEMT) and the HEMT with a Schottky drain and a DFP (SD-FP HEMT), the superiorities of SD-CFP HEMT lie in the continuous improvement of the reverse breakdown voltage by increasing the number of FFPs and in the same fabrication procedure as the SD-FP HEMT. Two useful optimization laws for the SD-CFP HEMTs are found and extracted from simulation results. The relationship between the number of the FFPs and the reverse breakdown voltage as well as the FP efficiency in SD-CFP HEMTs are discussed. The results in this paper demonstrate a great potential of CFP for enhancing the reverse blocking ability in AlGaN/GaN HEMT and may be of great value and significance in the design and actual manufacture of SD-CFP HEMTs.
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Received: 19 April 2015
Revised: 10 June 2015
Accepted manuscript online:
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PACS:
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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85.30.Tv
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(Field effect devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61204085, 61334002, 61306017, 61474091, 61574112, and 61574110). |
Corresponding Authors:
Wei Mao
E-mail: mwxidian@126.com
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Cite this article:
Wei Mao(毛维), Wei-Bo She(佘伟波), Cui Yang(杨翠), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Yue Hao(郝跃) Reverse blocking characteristics and mechanisms in Schottky-drainAlGaN/GaN HEMT with a drain field plate and floating field plates 2016 Chin. Phys. B 25 017303
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