Enhanced light emission from InGaN/GaN quantum wells by using surface plasmonic resonances of silver nanoparticle array

doi:10.1088/1674-1056/23/12/128504

Abstract The effect of silver nanostructures prepared by nanosphere lithography on the photoluminescence (PL) properties of blue-emitting InGaN/GaN quantum wells (QWs) is studied. Arrays of silver nanoparticles are fabricated to yield a collective surface plasmonic resonance (SPR) near to the QWs emission wavelength. A large enhancement in peak PL intensity is observed, when the induced SPR wavelength of the nanoparticles on the QWs sample matches the QWs emission wavelength. The study proves that the SPRs could enhance the light emission efficiency of semiconductor material.

Keywords: light-emitting devices photoluminescence metallic nanoparticle nanosphere lithography

Received: 03 June 2014
Revised: 10 September 2014
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	78.55.-m	(Photoluminescence, properties and materials)
	78.67.Bf	(Nanocrystals, nanoparticles, and nanoclusters)
	81.16.Nd	(Micro- and nanolithography)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10774195, U0834001, 10974263, 11174374, 11174061, and 10725420), the Key Program of Ministry of Education, China (Grant No. 309024), the New Century Excellent Talents in University, the National Basic Research Program of China (Grant No. 2010CB923200), and the Natural Science Foundation of Guangdong Province, China (Grant No. S2013010015795).

Corresponding Authors: Chong-Jun
E-mail: jinchjun@mail.sysu.edu.cn

Cite this article:

Chen Zhan-Xu (陈湛旭), Wan Wei (万巍), Zhang Bai-Jun (张佰君), He Ying-Ji (何影记), Jin Chong-Jun (金崇君) Enhanced light emission from InGaN/GaN quantum wells by using surface plasmonic resonances of silver nanoparticle array 2014 Chin. Phys. B 23 128504


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Enhanced light emission from InGaN/GaN quantum wells by using surface plasmonic resonances of silver nanoparticle array

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