CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Electronic structure and optical properties of MgxZn1-xS bulk crystal using first-principles calculations |
Yu Zhi-Qiang (余志强), Xu Zhi-Mou (徐智谋), Wu Xing-Hui (武兴会) |
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China |
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Abstract We perform the first-principles calculations within the framework of density functional theory to determine the electronic structure and optical properties of MgxZn1-xS bulk crystal. The results indicate that the electronic structure and optical properties of MgxZn1-xS bulk crystal are sensitive to the Mg impurity composition. In particular, the MgxZn1-xS bulk crystal displays a direct band structure and the band gap increases from 2.05 eV to 2.91 eV with Mg dopant composition value x increasing from 0 to 0.024. The S 3p electrons dominate the top of valence band, while the Zn 4s electrons and Zn 3p electrons occupy the bottom of conduction band in MgxZn1-xS bulk crystal. Moreover, the dielectric constant decreases and the optical absorption peak obviously has a blue shift. The calculated results provide important theoretical guidance for the applications of MgxZn1-xS bulk crystal in optical detectors.
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Received: 10 March 2014
Revised: 21 April 2014
Accepted manuscript online:
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PACS:
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71.20.-b
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(Electron density of states and band structure of crystalline solids)
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78.20.Ci
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(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
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Fund: Projected supported by the National Natural Science Foundation of China (Grant Nos. 61076042 and 61474048). |
Corresponding Authors:
Xu Zhi-Mou
E-mail: xuzhimou@hust.edu.cn
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About author: 71.20.-b; 78.20.Ci |
Cite this article:
Yu Zhi-Qiang (余志强), Xu Zhi-Mou (徐智谋), Wu Xing-Hui (武兴会) Electronic structure and optical properties of MgxZn1-xS bulk crystal using first-principles calculations 2014 Chin. Phys. B 23 107102
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