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Preparation and modification of VO2 thin film on R-sapphire substrate By Rapid Thermal Process |
1. 2. School of Electronics Information Engineering, Tianjin University
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Abstract 首次利用磁控溅射附加快速热处理方法(RTP)在R-面蓝宝石基底上制备了具有相变性能的二氧化钒薄膜,并利用四探针和太赫兹时域频谱系统(THz-TDS)研究了所制备薄膜相变过程中的电学和太赫兹光学特性。利用XRD、XPS、AFM和SEM对薄膜的结晶结构、价态、表面形貌进行分析.实验结果表明,金属钒薄膜氧气气氛下热处理形成的二氧化钒薄膜,其相变特性在经过氮气改性热处理后明显提升。二氧化钒结晶状态和成分有所提高并且薄膜表面变得更加致密均匀。相变前后薄膜电阻变化接近3个数量级,热致宽度仅为2℃,太赫兹透射率在热激励和光激励下分别降低64%和60%。
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Received: 05 September 2013
Revised: 24 October 2013
Published: 07 November 2013
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Fund: Natural Science Foundation of Beijing;Natural Science Foundation of Beijing PHR |
Cite this article:
Preparation and modification of VO2 thin film on R-sapphire substrate By Rapid Thermal Process Chin. Phys. B 0
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