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Chin. Phys. B, 2013, Vol. 22(11): 116803    DOI: 10.1088/1674-1056/22/11/116803
Special Issue: TOPICAL REVIEW — Magnetism, magnetic materials, and interdisciplinary research
TOPICAL REVIEW—Magnetism, magnetic materials, and interdisciplinary research Prev   Next  

High-mobility two-dimensional electron gases at oxide interfaces:Origin and opportunities

Chen Yun-Zhong (陈允忠)a, Nini Prydsa, Sun Ji-Rong (孙继荣)b, Shen Bao-Gen (沈保根)b, Søren Linderotha
a Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Roskilde 4000, Denmark;
b Beijing National Laboratory for Condensed Matter Physics, State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract  Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas (2DEG) at oxide interfaces. Due to the presence of oxygen vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 has Al, Ti, Zr, or Hf elements at the B sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ion sublattices. This 2DEG exhibits an electron mobility exceeding 100000 cm2·V-1·s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.
Keywords:  oxide interfaces      two-dimensional electron gas (2DEG)      SrTiO3      oxygen vacancies  
Received:  02 September 2013      Accepted manuscript online: 
PACS:  68.47.Gh (Oxide surfaces)  
  73.20.-r (Electron states at surfaces and interfaces)  
  81.15.Fg (Pulsed laser ablation deposition)  
Corresponding Authors:  Chen Yun-Zhong     E-mail:  yunc@dtu.dk

Cite this article: 

Chen Yun-Zhong (陈允忠), Nini Pryds, Sun Ji-Rong (孙继荣), Shen Bao-Gen (沈保根), Søren Linderoth High-mobility two-dimensional electron gases at oxide interfaces:Origin and opportunities 2013 Chin. Phys. B 22 116803

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