Special Issue:
TOPICAL REVIEW — Magnetism, magnetic materials, and interdisciplinary research
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TOPICAL REVIEW—Magnetism, magnetic materials, and interdisciplinary research |
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High-mobility two-dimensional electron gases at oxide interfaces:Origin and opportunities |
Chen Yun-Zhong (陈允忠)a, Nini Prydsa, Sun Ji-Rong (孙继荣)b, Shen Bao-Gen (沈保根)b, Søren Linderotha |
a Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Roskilde 4000, Denmark; b Beijing National Laboratory for Condensed Matter Physics, State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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Abstract Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas (2DEG) at oxide interfaces. Due to the presence of oxygen vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 has Al, Ti, Zr, or Hf elements at the B sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ion sublattices. This 2DEG exhibits an electron mobility exceeding 100000 cm2·V-1·s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.
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Received: 02 September 2013
Accepted manuscript online:
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PACS:
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68.47.Gh
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(Oxide surfaces)
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73.20.-r
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(Electron states at surfaces and interfaces)
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81.15.Fg
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(Pulsed laser ablation deposition)
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Corresponding Authors:
Chen Yun-Zhong
E-mail: yunc@dtu.dk
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Cite this article:
Chen Yun-Zhong (陈允忠), Nini Pryds, Sun Ji-Rong (孙继荣), Shen Bao-Gen (沈保根), Søren Linderoth High-mobility two-dimensional electron gases at oxide interfaces:Origin and opportunities 2013 Chin. Phys. B 22 116803
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