Improved performance of InGaN light-emitting diodes with a novel sawtooth-shaped electron blocking layer

doi:10.1088/1674-1056/22/8/088504

Abstract A sawtooth-shaped electron blocking layer is proposed to improve the performance of light-emitting diodes (LEDs). The energy band diagram, the electrostatic field in the quantum well, the carrier concentration, the electron leakage, and the internal quantum efficiency are systematically studied. The simulation results show that the LED with a sawtooth-shaped electron blocking layer possesses higher output power and a smaller efficiency droop than the LED with a conventional AlGaN electron blocking layer, which is because the electron confinement is enhanced and the hole injection efficiency is improved by the appropriately modified electron blocking layer energy band.

Keywords: light-emitting diodes efficiency droop electron blocking layer

Received: 29 October 2012
Revised: 26 February 2013
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	85.50.-n	(Dielectric, ferroelectric, and piezoelectric devices)
	87.15.A-	(Theory, modeling, and computer simulation)
	78.60.Fi	(Electroluminescence)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. U1034004, 50825603, and 51210011) and the Fundamental Research Funds for the Central Universities, China (Grant No. 12QX14).

Corresponding Authors: Xu Jin-Liang
E-mail: xjl@ncepu.edu.cn

Cite this article:

Wang Tian-Hu (王天虎), Xu Jin-Liang (徐进良) Improved performance of InGaN light-emitting diodes with a novel sawtooth-shaped electron blocking layer 2013 Chin. Phys. B 22 088504

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Improved performance of InGaN light-emitting diodes with a novel sawtooth-shaped electron blocking layer

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