Growth and characterization of single crystals of the quaternary TlGaSeS compound

doi:10.1088/1674-1056/22/5/058105

Abstract The electrical conductivity and Hall effect for TlGaSeS crystals have been investigated over a wide temperature range. The crystals we used are grown by a modified Bridgman technique and possess p-type conductivity. The energy gap has been found to be 1.63 eV, whereas the ionization energy is 0.25 eV. The variations of the Hall mobility as well as the carrier concentration with temperature have been investigated. The scattering mechanisms of the carrier are checked over the whole investigated temperature range. Furthermore, the diffusion coefficient, relaxation time, and diffusion length of holes are estimated.

Keywords: crystal growth DC electrical conductivity Hall effect TlGaSeS compound

Received: 26 July 2012
Revised: 22 October 2012
Accepted manuscript online:

PACS:	81.10.Fq	(Growth from melts; zone melting and refining)
	72.20.-i	(Conductivity phenomena in semiconductors and insulators)
	72.20.My	(Galvanomagnetic and other magnetotransport effects)

Corresponding Authors: S. R. Alharbi
E-mail: sr_alharbi@yahoo.com

Cite this article:

S. R. Alharbi Growth and characterization of single crystals of the quaternary TlGaSeS compound 2013 Chin. Phys. B 22 058105

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Growth and characterization of single crystals of the quaternary TlGaSeS compound

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