Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor

doi:10.1088/1674-1056/27/10/104207

Abstract

A pinned photodiode complementary metal-oxide-semiconductor transistor (CMOS) active pixel sensor is exposed to ⁶⁰Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad (SiO₂)/s and a total dose of 100 krad (SiO₂), and the photodiode is kept unbiased. The degradation of dark current, full well capacity, and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation (STI) surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose (TID) effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.

Keywords: CMOS active pixel sensor dark current quantum efficiency

Received: 28 April 2018
Revised: 24 May 2018
Accepted manuscript online:

PACS:	42.88.+h	(Environmental and radiation effects on optical elements, devices, and systems)
	85.60.Dw	(Photodiodes; phototransistors; photoresistors)
	42.50.-p	(Quantum optics)

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 11675259) and the West Light Foundation of the Chinese Academy of Sciences (Grant Nos. 2016-QNXZ-B-8 and 2016-QNXZ-B-2).

Corresponding Authors: Qi Guo
E-mail: guoqi@ms.xjb.ac.cn

Cite this article:

Lin-Dong Ma(马林东), Yu-Dong Li(李豫东), Lin Wen(文林), Jie Feng(冯婕), Xiang Zhang(张翔), Tian-Hui Wang(王田珲), Yu-Long Cai(蔡毓龙), Zhi-Ming Wang(王志铭), Qi Guo(郭旗) Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor 2018 Chin. Phys. B 27 104207

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Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor

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