Characteristics and properties of metal aluminum thin film prepared by electron cyclotron resonance plasma-assisted atomic layer deposition technology

doi:10.1088/1674-1056/21/7/078105

Abstract Metal aluminum (Al) thin films are prepared by 2450-MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas. We focus our attention on the plasma source for thin-film preparation and annealing of as-deposited films related to the surface square resistivity. The square resistivity of as-deposited Al film is greatly reduced after annealing and almost reaches the value of bulk metal. Through chemical and structure analysis we conclude that the square resistivity is determined by neither contaminant concentration nor surface morphology, but by both crystallinity and crystal size in this process.

Keywords: aluminum plasma-assisted atomic layer deposition annealing

Received: 24 November 2011
Revised: 13 January 2012
Accepted manuscript online:

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	07.57.Ty	(Infrared spectrometers, auxiliary equipment, and techniques)
	07.79.Lh	(Atomic force microscopes)
	07.85.Jy	(Diffractometers)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11175024), the Beijing Natural Science Foundation, China (Grant No. 1112012), the Science and Technology on Surface Engineering Laboratory, and the Beijing Education Committee, China (Grant Nos. BM201002, 2011BAD24B01, KM201110015008, KM201010015005, and PHR20110516).

Corresponding Authors: Chen Qiang
E-mail: lppmchenqiang@hotmail.com

Cite this article:

Xiong Yu-Qing(熊玉卿), Li Xing-Cun(李兴存), Chen Qiang(陈强), Lei Wen-Wen(雷雯雯), Zhao Qiao(赵桥), Sang Li-Jun(桑利军), Liu Zhong-Wei(刘忠伟), Wang Zheng-Duo(王正铎), and Yang Li-Zhen(杨丽珍) Characteristics and properties of metal aluminum thin film prepared by electron cyclotron resonance plasma-assisted atomic layer deposition technology 2012 Chin. Phys. B 21 078105

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Characteristics and properties of metal aluminum thin film prepared by electron cyclotron resonance plasma-assisted atomic layer deposition technology

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