The effects of substrate temperature on ZnO-based resistive random access memory devices

doi:10.1088/1674-1056/21/6/065201

Abstract Ag/ZnO/Zn/Pt structure resistive switching devices are prepared by radio frequency magnetron sputtering. The ZnO thin films are grown at room temperature and 400 ℃ substrate temperature, respectively. By comparing the data, we find that the latter device displayed better stability in the repetitive switching cycle test, and the resistance ratio between a high resistance state and a low resistance state is correspondingly increased. After 10⁴-s storage time measurement, this device exhibits a good retention property. Moreover, the operation voltages are very low: -0.3 V/-0.7 V (OFF state) and 0.3 V (ON state). A high-voltage forming process in the initial state is not required, and a multistep reset process is demonstrated.

Keywords: ZnO resistive switching devices magnetron sputtering

Received: 17 January 2012
Revised: 17 February 2012
Accepted manuscript online:

PACS:

52.77.Dq

(Plasma-based ion implantation and deposition)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50972007), the Beijing Municipal Natural Science Foundation, China (Grant No. 4092035), the State Key Program for Basic Research of the Ministry of Science and Technology of China (Grant No. 2011CB932703), the Special Items Fund of Beijing Municipal Commission of Education, China, the Opened Fund of the State Key Laboratory on Integrated Optoelectronics, China, and the National Natural Science Foundation of China for Distinguished Young Scholars (Grant No. 60825407).

Corresponding Authors: Zhang Xi-Qing
E-mail: xqzhang@bjtu.edu.cn

Cite this article:

Zhao Jian-Wei(赵建伟), Liu Feng-Juan(刘凤娟), Huang Hai-Qin(黄海琴), Hu Zuo-Fu(胡佐富), and Zhang Xi-Qing(张希清) The effects of substrate temperature on ZnO-based resistive random access memory devices 2012 Chin. Phys. B 21 065201

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The effects of substrate temperature on ZnO-based resistive random access memory devices

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