A–188 V 7.2 Ω·mm2, P-channel high voltage device formed on an epitaxy-SIMOX substrate

doi:10.1088/1674-1056/20/8/087101

Abstract This paper proposes a new n⁺-charge island (NCI) P-channel lateral double diffused metal—oxide semiconductor (LDMOS) based on silicon epitaxial separation by implantation oxygen (E-SIMOX) substrate. Higher concentration self-adapted holes resulting from a vertical electric field are located in the spacing of two neighbouring n⁺ -regions on the interface of a buried oxide layer, and therefore the electric field of a dielectric buried layer (E_I) is enhanced by these holes effectively, leading to an improved breakdown voltage (BV). The V_B and E_I of the NCI P-channel LDMOS increase to —188 V and 502.3 V/μm from -75 V and 82.2 V/μm of the conventional P-channel LDMOS with the same thicknesses SOI layer and the buried oxide layer, respectively. The influences of structure parameters on the proposed device characteristics are investigated by simulation. Moreover, compared with the conventional device, the proposed device exhibits low special on-resistance.

Keywords: dielectric buried layer breakdown voltage self-adapted holes epitaxy-SIMOX

Received: 09 December 2010
Revised: 10 January 2011
Accepted manuscript online:

PACS:	71.10.-w	(Theories and models of many-electron systems)
	73.20.-r	(Electron states at surfaces and interfaces)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	77.20.Jp

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 60976060), the Fund of the National Laboratory of Analog Integrated Circuit (Grant No. 9140C0903070904), and the Youth Teacher Foundation of the University of Electronic Science and Technology of China (Grant No. jx0721).

Cite this article:

Wu Li-Juan(吴丽娟), Hu Sheng-Dong(胡盛东), Zhang Bo(张波), Luo Xiao-Rong(罗小蓉), and Li Zhao-Ji(李肇基) A–188 V 7.2 Ω·mm², P-channel high voltage device formed on an epitaxy-SIMOX substrate 2011 Chin. Phys. B 20 087101

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A–188 V 7.2 Ω·mm2, P-channel high voltage device formed on an epitaxy-SIMOX substrate

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A–188 V 7.2 Ω·mm², P-channel high voltage device formed on an epitaxy-SIMOX substrate