Structural characterization of V/Al/V/Au Ohmic contacts to n-type Al0.4Ga0.6N

doi:10.1088/1674-1056/20/4/046101

Abstract This paper investigates the temperature dependence of the specific resistance in annealed V/Al/V/Au (15 nm/85 nm/20 nm/95 nm) contacts on n-Al_0.4Ga_0.6N. Contacts annealed at 700℃ and higher temperatures show Ohmic behaviour. Annealing at 800 du produces the lowest contact resistance. Samples annealed at 800℃ have been analysed by using cross-sectional transmission electron microscopy and an energy dispersive x-ray spectrum. Limited reaction depths are observed between V-based contacts and n-AlGaN. The VN grains are found to form in the contact layer of the annealed samples, which can be considered as the key to the successful formation of Ohmic contact. The contact layer adjacent to AlGaN material consists of V–Al–Au–N, AlN and AlAu alloys.

Keywords: Ohmic contact vanadium transmission electron microscopy energy dispersive x-ray spectrum

Received: 17 July 2010
Revised: 25 October 2010
Accepted manuscript online:

PACS:	61.05.jh	(Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED))
	68.37.Lp	(Transmission electron microscopy (TEM))
	61.72.uj	(III-V and II-VI semiconductors)
	73.40.Cg	(Contact resistance, contact potential)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10774001, 60736033, 60876041 and 60577030), National Basic Research Program of China (Grant Nos. 2006CB604908 and 2006CB921607), and the National Key Basic Research and Development Program of China (973 Project) (Grant No. TG2007CB307004).

Cite this article:

Li Tao(李涛), Qin Zhi-Xin(秦志新), Xu Zheng-Yu(许正昱), Shen Bo(沈波), and Zhang Guo-Yi(张国义) Structural characterization of V/Al/V/Au Ohmic contacts to n-type Al_0.4Ga_0.6N 2011 Chin. Phys. B 20 046101

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Structural characterization of V/Al/V/Au Ohmic contacts to n-type Al0.4Ga0.6N

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Structural characterization of V/Al/V/Au Ohmic contacts to n-type Al_0.4Ga_0.6N