Impurity-related electronic properties in quantum dots under electric and magnetic fields

doi:10.1088/1674-1056/20/3/037301

Abstract This paper presents a systematic study of the ground-state binding energies of a hydrogenic impurity in quantum dots subjected to external electric and magnetic fields. The quantum dot is modeled by superposing a lateral parabolic potential, a Gaussian potential and the energies are calculated via the finite-difference method within the effective-mass approximation. The variation of the binding energy with the lateral confinement, external field, position of the impurity, and quantum-size is studied in detail. All these factors lead to complicated binding energies of the donor, and the following results are found: (1) the binding energies of the donor increase with the increasing magnetic strength and lateral confinement, and reduce with the increasing electric strength and the dot size; (2) there is a maximum value of the binding energies as the impurity placed in different positions along the z direction; (3) the electric field destroys the symmetric behaviour of the donor binding energies as the position of the impurity.

Keywords: quantum dot hydrogenic impurity binding energy

Received: 22 August 2010
Revised: 19 October 2010
Accepted manuscript online:

PACS:	73.20.Hb	(Impurity and defect levels; energy states of adsorbed species)
	73.21.La	(Quantum dots)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10674040) and the Natural Science Foundation of Hebei Province, China (Grant No. A2007000233).

Cite this article:

Zhang Hong(张红), Zhai Li-Xue(翟利学), Wang Xue(王学), Zhang Chun-Yuan(张春元), and Liu Jian-Jun(刘建军) Impurity-related electronic properties in quantum dots under electric and magnetic fields 2011 Chin. Phys. B 20 037301

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